component
SVF65R950CDTR
Public Made by Adomby adom
Hangzhou Silan Microelectronics MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSVF65R950CDTR
Hangzhou Silan Microelectronics · MOSFETs · TO-252-2L
SVF65R950CDTR from Hangzhou Silan Microelectronics, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 650V N-channel MOSFET; gate-source voltage is rated ±30 V (VGS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 650 V (VDS) and continuous drain current is 9 A at TC=25°C. |
| 3 | S | passive | Source terminal; source diode continuous current is rated 9 A (IS) and pulsed current 36 A (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| 漏源击穿电压 (Drain-source breakdown voltage) | BVDSS | 650 | V | VGS=0V，ID=250µA | 2 | ||
| 漏源漏电流 (Drain-source leakage current) | IDSS | 1 | µA | VDS=650V，VGS=0V | 2 | ||
| 栅源漏电流 (Gate-source leakage current) | IGSS | -100 | 100 | nA | VGS=±30V，VDS=0V | 2 | |
| 栅极开启电压 (Gate threshold voltage) | VGS(th) | 2 | 4 | V | VGS=VDS，ID=250µA | 2 | |
| 导通电阻 (Static drain-source on-resistance) | RDS(on) | 0.85 | 0.98 | Ω | VGS=10V，ID=4.5A | 2 | |
| 源极电流 (Continuous source current, body diode) | IS | 9 | A | MOS管中源极、漏极构成的反偏P-N结 | 2 | ||
| 源极脉冲电流 (Pulsed source current) | ISM | 36 | A | 2 | |||
| 源-漏二极管压降 (Diode forward voltage) | VSD | 1.4 | V | IS=9A，VGS=0V | 2 | ||
| 漏源电压 (Drain-source voltage) | VDS | 650 | V | 1 | |||
| 栅源电压 (Gate-source voltage) | VGS | -30 | 30 | V | 1 | ||
| 漏极电流 (Drain current) | ID | 9 | A | TC=25°C | 1 | ||
| 漏极电流 (Drain current) | ID | 5.7 | A | TC=100°C | 1 | ||
| 漏极冲击电流 (Pulsed drain current) | IDM | 36 | A | 1 | |||
| 耗散功率 (Power dissipation) | PD | 148 | W | TC=25°C | 1 | ||
| 耗散功率降额 (Power dissipation derating) | PD | 1.18 | W/C | 大于25C 每摄氏度减少 | 1 | ||
| 单脉冲雪崩能量 (Single pulse avalanche energy) | EAS | 565 | mJ | 注1: L=30mH，IAS=5.8A，VDD=100V，RG=25，开始温度 TJ=25C | 1 | ||
| 工作结温范围 (Operating junction temperature range) | TJ | -55 | 150 | C | 1 | ||
| 贮存温度范围 (Storage temperature range) | Tstg | -55 | 150 | C | 1 | ||
| 芯片对管壳热阻 (Junction-to-case thermal resistance) | RθJC | 0.82 | C/W | 2 | |||
| 芯片对环境的热阻 (Junction-to-ambient thermal resistance) | RθJA | 62 | C/W | 2 |
CAD (KiCad official)
- Symbol:
SVF65R950CDTR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
svf65r950cdtr-etched.step/svf65r950cdtr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);svf65r950cdtr.step/svf65r950cdtr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (7 pp, sha256
9e1f4b4c16e1fe6b, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).