TPS62151RGTR from Texas Instruments, in a WQFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	SW	output	Switch node connected to the internal MOSFET switches; connect the inductor between SW and the output capacitor.
2	SW	output	Switch node connected to the internal MOSFET switches; connect the inductor between SW and the output capacitor.
3	SW	output	Switch node connected to the internal MOSFET switches; connect the inductor between SW and the output capacitor.
4	PG	output	Open-drain output power good (high = VOUT ready, low = VOUT below nominal regulation), requires a pullup resistor; PG sink current is limited to 10 mA maximum.
5	FB	input	Voltage feedback input of the adjustable version; connect a resistive voltage divider to this pin, and connect FB to AGND on fixed-output versions for improved thermal performance.
6	AGND	power_in	Analog ground; must be connected directly to the exposed thermal pad and the common ground plane.
7	FSW	input	Switching frequency select: low selects approximately 2.5 MHz and high selects approximately 1.25 MHz for typical operation; an internal pulldown keeps the pin low if floating.
8	DEF	input	Output voltage scaling: low selects nominal output voltage and high selects nominal plus 5%; an internal pulldown keeps the pin low if floating.
9	SS/TR	input	Soft-start and tracking pin; an external capacitor on this pin sets the internal voltage reference rise time and can be used for tracking and sequencing.
10	AVIN	power_in	Supply voltage for the control circuitry, to be connected to the same source as PVIN; the input voltage range is 3 V to 17 V.
11	PVIN	power_in	Supply voltage for the power stage, to be connected to the same source as AVIN; the input voltage range is 3 V to 17 V.
12	PVIN	power_in	Supply voltage for the power stage, to be connected to the same source as AVIN; the input voltage range is 3 V to 17 V.
13	EN	input	Enable input (high = enabled, low = disabled); an internal pulldown keeps the pin low if floating.
14	VOS	input	Output voltage sense pin and connection for the control loop circuitry.
15	PGND	power_in	Power ground; must be connected directly to the exposed thermal pad and the common ground plane.
16	PGND	power_in	Power ground; must be connected directly to the exposed thermal pad and the common ground plane.
17	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	WQFN-16-EP(3x3)
Category	Power Management (PMIC)
Pins	17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Input voltage range	VIN	3		17	V		5
Operating quiescent current	IQ		17	30	µA	EN = High, IOUT = 0 mA, device not switching	5
Operating quiescent current	IQ		17	25	µA	TA = -40°C to +85°C	5
Shutdown current	ISD		1.5	25	µA	EN = Low	5
Shutdown current	ISD		1.5	4	µA	TA = -40°C to +85°C	5
Undervoltage lockout threshold	VUVLO	2.6	2.7	2.8	V	Falling input voltage (PWM mode operation)	5
Input leakage current (EN, DEF, FSW)	ILKG		0.01	1	µA	EN = VIN or GND; DEF, FSW = VOUT or GND	5
Power-good threshold voltage, rising	VTH_PG	92	95	98	%VOUT	Rising (%VOUT)	5
Power-good threshold voltage, falling	VTH_PG	87	90	94	%VOUT	Falling (%VOUT)	5
Power-good output low voltage	VOL_PG		0.07	0.3	V	IPG = -2 mA	5
Input leakage current (PG)	ILKG_PG		1	400	nA	VPG = 1.8 V	5
SS/TR pin source current	ISS/TR	2.3	2.5	2.7	µA		5
High-side MOSFET ON-resistance	rDS(on)		90	170	mΩ	VIN ≥ 6 V	5
Low-side MOSFET ON-resistance	rDS(on)		40	70	mΩ	VIN ≥ 6 V	5
High-side MOSFET forward current limit	ILIMF	1.4	1.7	2.2	A	VIN = 12 V, TA = 25°C	5
Supply voltage VIN (at AVIN and PVIN)	VIN	3		17	V		4
Operating junction temperature	TJ	-40		125	°C		4
Pin voltage AVIN, PVIN		-0.3		20	V		4
Pin voltage EN, SS/TR		-0.3			V	max VIN + 0.3 V	4
Pin voltage SW		-0.3			V	max VIN + 0.3 V	4
Pin voltage DEF, FSW, FB, PG, VOS		-0.3		7	V		4
Power-good sink current PG				10	mA		4
Operating junction temperature	TJ	-40		150	°C		4
Storage temperature	Tstg	-65		150	°C		4
Junction-to-ambient thermal resistance	RθJA		45		°C/W		4
Junction-to-case (top) thermal resistance	RθJC(top)		53.6		°C/W		4
Junction-to-board thermal resistance	RθJB		17.4		°C/W		4
Junction-to-top characterization parameter	ψJT		1.1		°C/W		4
Junction-to-board characterization parameter	ψJB		17.4		°C/W		4
Junction-to-case (bottom) thermal resistance	RθJC(bot)		4.5		°C/W		4

CAD (KiCad official)

Symbol: TPS62151RGTR
Footprint: Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm
3D model: WQFN-16-EP(3x3) (KiCad packages3D, STEP)
3D model files: tps62151rgtr-etched.step / tps62151rgtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps62151rgtr.step / tps62151rgtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (44 pp, sha256 b146908d5c550566, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

TPS62151RGTR

Verified TPS62151RGTR

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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