component

FMMT449

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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FMMT449

MSKSEMI · Bipolar (BJT) · SOT-23

FMMT449 from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the emitter-base limit is VEBO 5 V maximum and emitter-base breakdown V(BR)EBO is 5 V at IE=100µA.
2 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base limit is VEBO 5 V maximum and the emitter current follows the 1 A IC rating.
3 COLLECTOR passive Collector terminal of the NPN transistor; the limits are VCBO 50 V, VCEO 30 V, and collector current IC 1 A maximum with PC 200 mW.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 30 V 2
Collector-Base Voltage VCBO 50 V 2
Emitter-Base Voltage VEBO 5 V 2
Collector Current IC 1 A 2
Collector Power Dissipation PC 200 mW 2
Junction Temperature Tj 150 ℃ 2
Storage Temperature Tstg -55 150 ℃ 2
Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W 2
Collector-base breakdown voltage V(BR)CBO 50 V IC=1mA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 30 V IC=10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100µA, IC=0 2
Collector cut-off current ICBO 0.1 µA VCB=40V, IE=0 2
Emitter cut-off current IEBO 0.1 µA VEB=4V, IC=0 2
DC current gain hFE(1) 70 VCE=2V, IC=50mA; pulse test 2
DC current gain hFE(2) 100 300 VCE=2V, IC=500mA; pulse test 2
DC current gain hFE(3) 80 VCE=2V, IC=1A; pulse test 2
DC current gain hFE(4) 40 VCE=2V, IC=2A; pulse test 2
Collector-emitter saturation voltage VCE(sat)1 0.5 V IC=1A, IB=100mA; pulse test 2
Collector-emitter saturation voltage VCE(sat)2 1 V IC=2A, IB=200mA; pulse test 2
Base-emitter saturation voltage VBE(sat) 1.25 V IC=1A, IB=100mA; pulse test 2
Base-emitter voltage VBE 1 V VCE=2V, IC=1A; pulse test 2
Transition frequency fT 150 MHz VCE=10V, IC=50mA, f=100MHz 2
Collector output capacitance Cob 15 pF VCB=10V, IE=0, f=1MHz 2

CAD (KiCad official)

  • Symbol: FMMT449
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt449-etched.step / fmmt449-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt449.step / fmmt449.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (4 pp, sha256 fd0807fa284441fe, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF