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Contents

README

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AP9997GH-HF-VB

VBsemi Elec · MOSFETs · TO-252

AP9997GH-HF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET control terminal. Absolute maximum VGS = ±20 V; gate threshold VGS(th) = 1.0 V (min) to 3.5 V (max). Total gate charge Qg ≈ 24 nC typ at VDS = 50 V, VGS = 10 V.
2 D passive Drain. High-voltage power terminal. VDS(max) = 100 V, continuous ID = 15 A at TC = 25 °C (13 A at TC = 125 °C), pulsed IDM = 40 A. Electrically tied to the exposed tab (heat slug) of the TO-252 package.
3 S passive Source. Low-side power terminal and reference for VGS. Continuous source (body diode) current IS = 3 A; body diode VSD ≈ 0.9 V typ (1.5 V max) at IF = 3 A, VGS = 0 V; trr ≈ 180 ns typ.
4 D (TAB) passive Exposed metal tab, internally connected to Drain. Primary thermal path - solder to a copper pad for heat sinking (recommended pad ≈ 5.69 × 6.18 mm per page 6). Electrically identical to pin 2.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AP9997GH-HF-VB

CAD (KiCad official)

  • Symbol: AP9997GH-HF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 6d5dba41c22e255f, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF