component
IRF820PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIRF820PBF
Vishay Intertech · MOSFETs · TO-220AB
IRF820PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS). |
| 2 | D | passive | Drain of the N-channel MOSFET; rated for 500 V drain-source voltage (VDS) and 2.5 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET; the integral body diode is rated for 2.5 A continuous and 8.0 A pulsed source-drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 500 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 2.5 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 1.6 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 8 | A | 1 | |||
| Linear Derating Factor | 0.4 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 210 | mJ | 1 | |||
| Repetitive Avalanche Current | IAR | 2.5 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 5 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 50 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 3.5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s | 1 | |||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 2.5 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | Flat, greased surface | 2 | ||
| Drain-Source Breakdown Voltage | VDS | 500 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| VDS Temperature Coefficient | VDS/TJ | 0.59 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 500 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 400 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 3 | Ω | VGS = 10 V, ID = 1.5 A | 2 | ||
| Forward Transconductance | gfs | 1.5 | S | VDS = 50 V, ID = 1.5 A | 2 | ||
| Input Capacitance | Ciss | 360 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 92 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 37 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Total Gate Charge | Qg | 24 | nC | VGS = 10 V, ID = 2.1 A, VDS = 400 V | 2 | ||
| Gate-Source Charge | Qgs | 3.3 | nC | VGS = 10 V, ID = 2.1 A, VDS = 400 V | 2 | ||
| Gate-Drain Charge | Qgd | 13 | nC | VGS = 10 V, ID = 2.1 A, VDS = 400 V | 2 | ||
| Turn-On Delay Time | td(on) | 8 | ns | VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω | 2 | ||
| Rise Time | tr | 8.6 | ns | VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 33 | ns | VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω | 2 | ||
| Fall Time | tf | 16 | ns | VDD = 250 V, ID = 2.1 A, Rg = 18 Ω, RD = 100 Ω | 2 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | 2 | |||
| Continuous Source-Drain Diode Current | IS | 2.5 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 8 | A | 2 | |||
| Body Diode Voltage | VSD | 1.6 | V | TJ = 25 °C, IS = 2.5 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 260 | 520 | ns | TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.7 | 1.4 | nC | TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
IRF820PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf820pbf-etched.step/irf820pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf820pbf.step/irf820pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
c2a5584f3fe73975, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).