component
SVT044R5NT
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Hangzhou Silan Microelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSVT044R5NT
Hangzhou Silan Microelectronics · MOSFETs · TO-220
SVT044R5NT from Hangzhou Silan Microelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the datasheet limits the gate-source voltage to VGS = ±20 V (absolute maximum). |
| 2 | Drain | passive | MOSFET drain terminal; the datasheet rates the drain-source voltage at VDS = 40 V and the continuous drain current at 178 A (TC=25°C) for this part. |
| 3 | Source | passive | MOSFET source terminal; the datasheet lists the continuous source current IS as 160 A and the pulsed source current ISM as 640 A for this part. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3.5 | V | VGS= VDS, ID=250µA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=40V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Static Drain-Source On State Resistance (220/252 package row) | RDS(on) | 3.5 | 4.5 | mΩ | VGS=10V, ID=50A (220/252) | 2 | |
| Continuous Source Current | IS | 160 | A | Integral reverse P-N junction diode in the MOSFET | 2 | ||
| Pulsed Source Current | ISM | 640 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | IS=50A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 178 | A | TC=25°C | 1 | ||
| Drain Current | ID | 112 | A | TC=100°C | 1 | ||
| Drain Current (package limited) | ID | 160 | A | TC=25°C (package limited), SVT044R5NT column | 1 | ||
| Drain Current Pulsed | IDM | 640 | A | 1 | |||
| Power Dissipation | PD | 178 | W | TC=25°C | 1 | ||
| Power Dissipation derating | PD | 1.42 | W/C | Derate above 25°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 612 | mJ | L=1mH, VDD=38V, RG=10Ω, starting TJ=25°C (Note 1) | 1 | ||
| Operation Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.7 | C/W | Junction-to-case, SVT044R5NT column | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | C/W | Junction-to-ambient, SVT044R5NT column | 2 |
CAD (KiCad official)
- Symbol:
SVT044R5NT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
svt044r5nt-etched.step/svt044r5nt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);svt044r5nt.step/svt044r5nt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (8 pp, sha256
fdf8788f95f5b646, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).