component
CJL2013
Public Made by Adomby adom
Changjing MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCJL2013
Changjing · MOSFETs · SOT-23-6L
CJL2013 from Changjing, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated ±10 V (VGS). |
| 2 | D1,D2 | passive | Common drain connection of both MOSFETs; drain-source voltage is rated 20 V (VDS) with 6 A continuous drain current. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated ±10 V (VGS). |
| 4 | S2 | passive | Source of MOSFET 2. |
| 5 | D1,D2 | passive | Common drain connection of both MOSFETs; drain-source voltage is rated 20 V (VDS) with 6 A continuous drain current. |
| 6 | S1 | passive | Source of MOSFET 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous drain current | ID | 6 | A | 1 | |||
| Pulsed drain current | IDM | 25 | A | note 1 | 1 | ||
| Operation junction and storage temperature range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Lead temperature for soldering purposes | TL | 260 | ℃ | 1/8'' from case for 10 s | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 83.3 | ℃/W | note 2 | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS = VGS, ID = 250µA (note 3) | 2 |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 16V, VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS = ±10V, VDS = 0V | 2 | |
| Drain-source on-resistance | RDS(on) | 12.2 | 14 | mΩ | VGS = 4.5V, ID = 3A (note 3) | 2 | |
| Drain-source on-resistance | RDS(on) | 14.9 | 20 | mΩ | VGS = 2.5V, ID = 3A (note 3) | 2 | |
| Drain-source on-resistance | RDS(on) | 11.4 | 12.9 | 14.5 | mΩ | VGS = 3.8V, ID = 3A | 2 |
| Drain-source on-resistance | RDS(on) | 12 | 13.6 | 16 | mΩ | VGS = 3.1V, ID = 3A | 2 |
| Forward transconductance | gFS | 10 | S | VDS = 5V, ID = 4.5A (note 3) | 2 | ||
| Diode forward voltage | VSD | 1.2 | V | IS = 1.25A, VGS = 0V (note 3) | 2 |
CAD (KiCad official)
- Symbol:
CJL2013 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
cjl2013-etched.step/cjl2013-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjl2013.step/cjl2013.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
d377308c5e9a6695, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).