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Contents

README

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PZT3906

Changjiang Electronics Tech (CJ) · Bipolar Transistors - BJT · SOT-223

PZT3906 from Changjiang Electronics Tech (CJ), in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base of the PNP transistor; emitter-base voltage limited to -5 V (VEBO) with VBE(sat) of -0.65 to -0.85 V at IC=-10 mA.
2 COLLECTOR passive Collector of the PNP transistor; rated VCBO -40 V, VCEO -40 V and continuous collector current -200 mA.
3 EMITTER passive Emitter of the PNP transistor; emitter-base breakdown V(BR)EBO is -5 V minimum at IE=0.01 mA.

Key specifications

Parameter Value
Manufacturer Changjiang Electronics Tech (CJ)
Package SOT-223
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -40 V IC=-0.01mA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -40 V IC=-1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=0.01mA, IC=0 1
Collector cut-off current ICBO -50 nA VCB=-30V, IE=0 1
DC current gain hFE(1) 60 VCE=-1V, IC=-0.1mA 1
DC current gain hFE(2) 80 VCE=-1V, IC=-1mA 1
DC current gain hFE(3) 100 300 VCE=-1V, IC=-10mA 1
Collector-emitter saturation voltage VCE(sat) -0.25 V IC=-10mA, IB=-1mA 1
Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-50mA, IB=-5mA 1
Base-emitter saturation voltage VBE(sat) -0.65 -0.85 V IC=-10mA, IB=-1mA 1
Base-emitter saturation voltage VBE(sat) -0.95 V IC=-50mA, IB=-5mA 1
Transition frequency fT 250 MHz VCE=-20V, IC=-10mA, f=100MHz 1
Collector output capacitance Cob 4.5 pF VCB=-5V, IE=0, f=1MHz 1
Emitter input capacitance Cib 10 pF VBE=-0.5V, IC=0, f=1MHz 1
Delay time td 35 ns VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA 1
Rise time tr 35 ns VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA 1
Storage time ts 225 ns VCC=-3V, IC=-10mA, IB1=-IB2=-1mA 1
Fall time tf 75 ns VCC=-3V, IC=-10mA, IB1=-IB2=-1mA 1
Collector-base voltage VCBO -40 V Ta=25℃ 1
Collector-emitter voltage VCEO -40 V Ta=25℃ 1
Emitter-base voltage VEBO -5 V Ta=25℃ 1
Collector current IC -200 mA Ta=25℃ 1
Collector power dissipation PC 1 W Ta=25℃ 1
Junction temperature Tj 150 ℃ Ta=25℃ 1
Storage temperature Tstg -55 150 ℃ Ta=25℃ 1
Thermal resistance junction to ambient RθJA 125 ℃/W Ta=25℃ 1

CAD (KiCad official)

  • Symbol: PZT3906
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: pzt3906-etched.step / pzt3906-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pzt3906.step / pzt3906.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjiang Electronics Tech (CJ) datasheet (4 pp, sha256 59ac76a1022b3e63, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF