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ZTX1053A

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

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ZTX1053A

Diodes Incorporated · Bipolar Transistors - BJT · TO-92

ZTX1053A from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector; VCEO 75V, VCBO 150V, 3A continuous and 10A peak collector current.
2 B passive Base; base current rated 500mA max and VEBO 5V max.
3 E passive Emitter; main current return of the NPN transistor, with VEBO limit of 5V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-92
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage V(BR)CBO 150 245 V IC = 100µA 2
Collector-Emitter Breakdown Voltage VCES 150 245 V IC = 100µA 2
Collector-Emitter Breakdown Voltage VCEO 75 100 V IC = 10mA 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 8.8 V IE = 100µA 2
Collector Cutoff Current ICBO 0.3 10 nA VCB = 120V 2
Emitter Cutoff Current IEBO 0.3 10 nA VEB = 4V 2
Collector Emitter Cutoff Current ICES 0.3 10 nA VCES = 120V 2
Collector-Emitter Saturation Voltage VCE(sat) 17 25 mV IC = 0.2A, IB = 20mA (Note 1) 2
Collector-Emitter Saturation Voltage VCE(sat) 120 150 mV IC = 1A, IB = 10mA (Note 1) 2
Collector-Emitter Saturation Voltage VCE(sat) 180 250 mV IC = 3A, IB = 100mA (Note 1) 2
Base-Emitter Saturation Voltage VBE(sat) 900 1000 mV IC = 3A, IB = 100mA (Note 1) 2
Base-Emitter Turn-On Voltage VBE(on) 825 950 mV IC = 3A, VCE = 2V (Note 1) 2
Static Forward Current Transfer Ratio hFE 260 420 IC = 10mA, VCE = 2V (Note 1) 2
Static Forward Current Transfer Ratio hFE 300 450 1200 IC = 1A, VCE = 2V (Note 1) 2
Static Forward Current Transfer Ratio hFE 100 150 IC = 3A, VCE = 2V (Note 1) 2
Static Forward Current Transfer Ratio hFE 15 IC = 10A, VCE = 2V (Note 1) 2
Output Capacitance Cobo 21 30 pF VCB = 10V, f = 1MHz 2
Transition Frequency fT 140 MHz IC = 50mA, VCE = 10V, f = 100MHz 2
Turn-on Time ton 90 ns IC = 2A, IB = 20mA, VCC = 50V 2
Turn-off Time toff 750 ns IC = 2A, IB = ±20mA, VCC = 50V 2
Collector-Base Voltage VCBO 150 V 1
Collector-Emitter Voltage VCEO 75 V 1
Emitter-Base Voltage VEBO 5 V 1
Peak Pulse Current ICM 10 A 1
Continuous Collector Current IC 3 A 1
Base Current IB 500 mA 1
Power Dissipation Ptot 1 w Tamb = +25°C 1
Operating and Storage Temperature Range TJ, TSTG -55 200 °C 1

CAD (KiCad official)

  • Symbol: ZTX1053A
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: ztx1053a-etched.step / ztx1053a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ztx1053a.step / ztx1053a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 0d4cae21769cc599, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF