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Contents

README

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HY3010D

HUAYI · MOSFETs · TO-252-2L

HY3010D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±25 V, with threshold VGS(th) of 2 V min to 4 V max at 250 µA.
2 D passive Drain, connected to the exposed tab (center lead omitted in the 2L package); VDSS 100 V, continuous ID 60 A at Tc=25°C.
3 S passive Source; continuous body-diode source current 60 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -25 25 V 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 60 A Tc=25°C 2
Pulsed Drain Current IDM 228 A Tc=25°C 2
Continuous Drain Current ID 60 A Tc=25°C 2
Continuous Drain Current ID 45 A Tc=100°C 2
Maximum Power Dissipation PD 65 W Tc=25°C 2
Maximum Power Dissipation PD 33 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RJC 2.3 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 110 °C/W Surface mounted on 1in2 FR-4 board 2
Single Pulsed-Avalanche Energy EAS 355 mJ L=0.5mH, starting TJ=25°C, VDS=80V, VGS=10V 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=68V,VGS=0V 2
Drain-to-Source Leakage Current IDSS 5 μA TJ=125°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±25V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 10 12 mΩ VGS=10V,IDS=30A 2
Diode Forward Voltage VSD 0.9 1.2 V ISD=30A,VGS=0V 2
Reverse Recovery Time trr 30 ns ISD=30A,dISD/dt=100A/μs 2
Reverse Recovery Charge Qrr 50 nC 2
Gate Resistance RG 1.14 Ω VGS=0V,VDS=0V,F=1MHz 3
Input Capacitance Ciss 3197 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Output Capacitance Coss 361 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Reverse Transfer Capacitance Crss 230 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Turn-on Delay Time td(ON) 19 ns VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V 3
Turn-on Rise Time Tr 50 ns VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V 3
Turn-off Delay Time td(OFF) 62 ns VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V 3
Turn-off Fall Time Tf 68 ns VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V 3
Total Gate Charge Qg 81 nC VDS=80V, VGS=10V, IDs=30A 3
Gate-Source Charge Qgs 13 nC VDS=80V, VGS=10V, IDs=30A 3
Gate-Drain Charge Qgd 26 nC VDS=80V, VGS=10V, IDs=30A 3

CAD (KiCad official)

  • Symbol: HY3010D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hy3010d-etched.step / hy3010d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hy3010d.step / hy3010d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (11 pp, sha256 30a03b3a76a941fe, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF