component
FDS86242
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS86242
onsemi · MOSFETs · SO-8
FDS86242 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the device is rated for VDS 150 V and 4.1 A continuous drain current. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the device is rated for VDS 150 V and 4.1 A continuous drain current. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the device is rated for VDS 150 V and 4.1 A continuous drain current. |
| 4 | G | input | Gate terminal; the datasheet specifies a gate-to-source voltage rating of ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; rated for 150 V drain-to-source and 4.1 A continuous drain current (20 A pulsed). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; rated for 150 V drain-to-source and 4.1 A continuous drain current (20 A pulsed). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; rated for 150 V drain-to-source and 4.1 A continuous drain current (20 A pulsed). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; rated for 150 V drain-to-source and 4.1 A continuous drain current (20 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 150 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current -Continuous | ID | 4.1 | A | 1 | |||
| Drain Current -Pulsed | ID | 20 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 40 | mJ | Note 3 | 1 | ||
| Power Dissipation | PD | 5 | W | TC = 25 °C (Note 1) | 1 | ||
| Power Dissipation | PD | 2.5 | W | TA = 25 °C (Note 1a) | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 25 | °C/W | (Note 1) | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 50 | °C/W | (Note 1a) | 1 | ||
| Drain to Source Breakdown Voltage | BVDSS | 150 | V | ID = 250 μA, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 120 V, VGS = 0 V | 2 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0 V | 2 | |
| Gate to Source Threshold Voltage | VGS(th) | 2 | 3.5 | 4 | V | VGS = VDS, ID = 250 μA | 2 |
| Static Drain to Source On Resistance | rDS(on) | 56.3 | 67 | mΩ | VGS = 10 V, ID = 4.1 A | 2 | |
| Static Drain to Source On Resistance | rDS(on) | 73.8 | 98 | mΩ | VGS = 6 V, ID = 3.3 A | 2 | |
| Static Drain to Source On Resistance | rDS(on) | 107 | 126 | mΩ | VGS = 10 V, ID = 4.1 A, TJ = 125 °C | 2 | |
| Input Capacitance | Ciss | 570 | 760 | pF | VDS = 75 V, VGS = 0 V, f = 1MHz | 2 | |
| Output Capacitance | Coss | 64 | 85 | pF | 2 | ||
| Reverse Transfer Capacitance | Crss | 2.9 | 5 | pF | 2 | ||
| Turn-On Delay Time | td(on) | 7.9 | 16 | ns | VDD = 75 V, ID = 4.1 A, VGS = 10 V, RGEN = 6 Ω | 2 | |
| Rise Time | tr | 1.5 | 10 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 13 | 23 | ns | 2 | ||
| Fall Time | tf | 2.8 | 10 | ns | 2 | ||
| Total Gate Charge | Qg(TOT) | 8.9 | 13 | nC | VGS = 0 V to 10 V, VDD = 75 V, ID = 4.1 A | 2 | |
| Total Gate Charge | Qg(TOT) | 4.9 | 7 | nC | VGS = 0 V to 5 V | 2 | |
| Source to Drain Diode Forward Voltage | VSD | 0.81 | 1.3 | V | VGS = 0 V, IS = 4.1 A (Note 2) | 2 | |
| Source to Drain Diode Forward Voltage | VSD | 0.77 | 1.2 | V | VGS = 0 V, IS = 2 A (Note 2) | 2 | |
| Reverse Recovery Time | trr | 61 | 98 | ns | IF = 4.1 A, di/dt = 100 A/μs | 2 | |
| Reverse Recovery Charge | Qrr | 71 | 114 | nC | 2 |
CAD (KiCad official)
- Symbol:
FDS86242 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds86242-etched.step/fds86242-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds86242.step/fds86242.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
70a1b5d274e622f5, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).