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APM4910KC-TRL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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APM4910KC-TRL-VB

VBsemi Elec · MOSFETs · SO-8

APM4910KC-TRL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D2 passive Drain of the second N-channel MOSFET (VDS 30 V, ID up to 8 A package limited), tied with pin 2.
2 D2 passive Drain of the second N-channel MOSFET (VDS 30 V, ID up to 8 A package limited), tied with pin 1.
3 G1 input Gate of the first N-channel MOSFET, VGS maximum ±20 V with threshold of 1.0 to 2.5 V.
4 SOURCE1/ANODE passive Source of the first N-channel MOSFET, also the anode of its body diode.
5 DRAIN1/SOURCE2/CATHODE passive Common node of drain of MOSFET 1 and source of MOSFET 2 (body diode cathode), tied with pins 6 and 7.
6 DRAIN1/SOURCE2/CATHODE passive Common node of drain of MOSFET 1 and source of MOSFET 2 (body diode cathode), tied with pins 5 and 7.
7 DRAIN1/SOURCE2/CATHODE passive Common node of drain of MOSFET 1 and source of MOSFET 2 (body diode cathode), tied with pins 5 and 6.
8 G2 input Gate of the second N-channel MOSFET, VGS maximum ±20 V with threshold of 1.0 to 2.5 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (hot) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 10 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.008 Ω VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = 4.5 V, ID = 4 A 2
Forward Transconductance gfs 16 S VDS = 10 V, ID = 5 A 2
Gate Resistance Rg 0.8 4.3 8.6 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 12 24 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 55 100 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 11 22 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 9 18 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 10 20 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 6 12 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.25 A TC = 25 °C 2
Pulse Diode Forward Current ISM 24 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 11 20 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 7.2 A TJ = 150 °C, TA = 25 °C (b, c) 1
Pulsed Drain Current IDM 40 A 1
Continuous Source-Drain Diode Current IS 2.25 A TC = 25 °C 1
Single Pulse Avalanche Current IAS 5 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 1.25 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 2.7 W TC = 25 °C 1
Maximum Power Dissipation PD 1.78 W TA = 25 °C (b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 58 70 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot (Drain) RthJF 38 45 °C/W Steady State 1
VDS Temperature Coefficient ΔVDS/TJ 32 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5 mV/°C 2
Input Capacitance Ciss 586 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 117 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Body Diode Reverse Recovery Charge Qrr 48 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: APM4910KC-TRL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: apm4910kc-trl-vb-etched.step / apm4910kc-trl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apm4910kc-trl-vb.step / apm4910kc-trl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 ee61b32247cc6225, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF