component
2SC5886A
Public Made by Adomby adom
TOSHIBA Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SC5886A
TOSHIBA · Bipolar (BJT) · TO-252
2SC5886A from TOSHIBA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; drive current IB max 0.5 A, with VEBO max 9 V. |
| 2 | C | passive | Collector (also the heatsink tab); VCBO 120 V, VCEO 50 V, IC 5 A DC and 10 A pulse. |
| 3 | E | passive | Emitter; connected to the circuit's low-side return in NPN switching use, with VEBO max 9 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 120 | V | 1 | |||
| Collector-emitter voltage | VCEX | 100 | V | 1 | |||
| Collector-emitter voltage | VCEO | 50 | V | 1 | |||
| Emitter-base voltage | VEBO | 9 | V | 1 | |||
| Collector current DC | IC | 5 | A | 1 | |||
| Collector current pulse | ICP | 10 | A | 1 | |||
| Base current | IB | 0.5 | A | 1 | |||
| Collector power dissipation | Pc | 1 | W | Ta = 25°C | 1 | ||
| Collector power dissipation | Pc | 20 | W | Tc = 25°C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Collector cutoff current | ICBO | 100 | nA | VCB = 120 V, IE = 0 | 2 | ||
| Emitter cutoff current | IEBO | 100 | nA | VEB = 9 V, IC = 0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC = 10 mA, IB = 0 | 2 | ||
| DC current gain | hFE(1) | 400 | 1000 | VCE = 2 V, IC = 0.5 A | 2 | ||
| DC current gain | hFE(2) | 200 | VCE = 2 V, IC = 1.6 A | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.22 | V | IC = 1.6 A, IB = 32 mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.1 | V | IC = 1.6 A, IB = 32 mA | 2 |
CAD (KiCad official)
- Symbol:
2SC5886A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2sc5886a-etched.step/2sc5886a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sc5886a.step/2sc5886a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
677237fafac0b91d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).