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Contents

README

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BD9876AEFJ-E2

ROHM Semicon · DC-DC Converters · SOIC-8-EP

BD9876AEFJ-E2 from ROHM Semicon, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Lx output Terminal for the inductor, connecting the internal Nch FET switch node to the external coil.
2 GND power_in Ground pin.
3 VC output Error amplifier output, where external C and R are connected to GND as phase compensation elements.
4 FB input Inverting node of the transconductance error amplifier, with internal standard voltage of 1.0V.
5 SYNC input Input pin for an external square-wave clock to synchronize the oscillator, with High level above 2V, Low level below 0.8V, and a synchronization range of 200kHz to 500kHz.
6 EN input Stand-by ON/OFF pin, where a voltage of 2.0V or more turns the IC on and open or 0V turns it off.
7 BST power_in Voltage supply pin for the high-side FET driver.
8 VCC power_in Voltage input pin; the input supply range is 7V to 42V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOIC-8-EP
Category Power Management ICs
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VCC-GND Supply Voltage VCC 45 V 4
BST-GND Voltage VBST 50 V 4
BST-Lx Voltage ⊿VBST 7 V 4
EN-GND Voltage VEN 45 V 4
Lx-GND Voltage VLX 45 V 4
FB-GND Voltage VFB 7 V 4
VC-GND Voltage VC 7 V 4
SYNC-GND Voltage SYNC 7 V 4
High-side FET Drain Current IDH 3.5 A 4
Power Dissipation Pd 3.76 W During mounting of 70×70×1.6t mm 4layer board (Copper area: 70mm×70mm); reduce by 30.08mW per °C above 25°C 4
Operating Temperature Topr -40 105 ℃ 4
Storage Temperature Tstg -55 150 ℃ 4
Junction Temperature Tjmax 150 ℃ 4
Stand-by current of VCC Ist 0 10 µA VEN=0V 4
Circuit current of VCC Icc 1 2 mA FB=1.2V 4
UVLO Detect Voltage Vuv 6.1 6.4 6.7 V 4
UVLO Hysteresis width Vuvhy 200 300 mV 4
Oscillating frequency fosc 270 300 330 kHz 4
Max Duty Cycle Dmax 85 91 97 % 4
FB threshold voltage VFB 0.99 1 1.01 V 4
Input bias current IFB -1 0 1 µA VFB=0V 4
Error amplifier DC gain AVEA 700 7000 70000 V/V 4
Trans Conductance GEA 110 220 440 µA/V IVC=±10µA, VC=1.5V 4
Soft Start Time Tsoft 7 10 13 ms 4
VC to switch current transconductance GCS 5 10 20 A/V 4
Lx NMOS ON resistance RonH 200 340 mΩ 4
Lx pre-charge NMOS ON resistance RonL 10 17 Ω 4
Over Current Detect Current Iocp 3.5 6 A 5
EN Pin Control voltage ON VENON 2 V 5
EN Pin Control voltage OFF VENOFF -0.3 0.8 V 5
EN Pin input current REN 2.7 5.5 11 µA VEN=3V 5
SYNC Pin Control voltage High VSYNCH 2 5.5 V 5
SYNC Pin Control voltage Low VSYNCL -0.3 0.8 V 5
SYNC Pin input current REN 6 12 24 µA VSYNC=3V 5
SYNC falling edge to LX rising edge delay tdelay 200 400 600 ns 5
Power Supply Voltage VCC 7 42 V 5
Output Voltage VOUT 1 V Max printed as VCC×0.7; restricted by minimum on pulse typ. 200ns 5

CAD (KiCad official)

  • Symbol: BD9876AEFJ-E2
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm
  • 3D model: SOIC-8-EP (KiCad packages3D, STEP)
  • 3D model files: bd9876aefj-e2-etched.step / bd9876aefj-e2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bd9876aefj-e2.step / bd9876aefj-e2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (26 pp, sha256 69448a0200b623f7, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF