component
IRF530NSTRLPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF530NSTRLPBF
Infineon Technologies · MOSFETs · D2PAK
IRF530NSTRLPBF from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and gate threshold VGS(th) of 2.0 V to 4.0 V. |
| 2 | D | passive | Drain (also connected to the tab); VDSS = 100 V with continuous drain current of 17 A at TC = 25°C. |
| 3 | S | passive | Source; current return path of the MOSFET and body diode with continuous source current of 17 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | D2PAK |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 90 | mΩ | VGS = 10V, ID = 9.0A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Forward Transconductance | gfs | 12 | S | VDS = 50V, ID = 9.0A | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 25 | µA | VDS = 100V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (150°C) | IDSS | 250 | µA | VDS = 80V, VGS = 0V, TJ = 150°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Total Gate Charge | Qg | 37 | nC | ID = 9.0A, VDS = 80V, VGS = 10V | 2 | ||
| Gate-to-Source Charge | Qgs | 7.2 | nC | VDS = 80V | 2 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 11 | nC | VGS = 10V | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 9.0A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 93 | 140 | ns | TJ = 25°C, IF = 9.0A, di/dt = 100A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 320 | 480 | nC | TJ = 25°C, IF = 9.0A, di/dt = 100A/µs | 2 | |
| Continuous Source Current (Body Diode) | IS | 17 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 60 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 340 | 93 | mJ | IAS = 9.0A, L = 2.3mH | 2 | |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.11 | V/°C | Reference to 25°C, ID = 1mA | 2 | ||
| Turn-On Delay Time | td(on) | 9.2 | ns | VDD = 50V, ID = 9.0A, RG = 12Ω, VGS = 10V | 2 | ||
| Rise Time | tr | 22 | ns | VDD = 50V, ID = 9.0A, RG = 12Ω, VGS = 10V | 2 | ||
| Turn-Off Delay Time | td(off) | 35 | ns | VDD = 50V, ID = 9.0A, RG = 12Ω, VGS = 10V | 2 | ||
| Fall Time | tf | 25 | ns | VDD = 50V, ID = 9.0A, RG = 12Ω, VGS = 10V | 2 | ||
| Input Capacitance | Ciss | 920 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 130 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 19 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 | ||
| Continuous Drain Current | ID | 17 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 12 | A | TC = 100°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Power Dissipation | PD | 3.8 | W | TA = 25°C | 1 | ||
| Power Dissipation | PD | 70 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 0.47 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Avalanche Current | IAR | 9 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 7 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 7.4 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds, 1.6mm from case | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 2.15 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W | PCB Mounted, steady-state | 1 |
CAD (KiCad official)
- Symbol:
IRF530NSTRLPBF - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
irf530nstrlpbf-etched.step/irf530nstrlpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf530nstrlpbf.step/irf530nstrlpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (12 pp, sha256
ad20435756423cfd, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).