component
DMTH8012LK3-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMTH8012LK3-13
Diodes Incorporated · MOSFETs · TO-252
DMTH8012LK3-13 from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V with threshold VGS(TH) of 1V min to 3V max at ID = 250μA. |
| 2 | D | passive | Drain (center lead, also connected to the tab); drain-source voltage rated 80V with continuous drain current of 50A at TC = +25°C. |
| 3 | S | passive | Source; body diode continuous forward current is 3A maximum with VSD of 1.2V max at IS = 25A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 80 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 50 | A | VGS = 10V, TC = +25C | 2 | ||
| Continuous Drain Current | ID | 35 | A | VGS = 10V, TC = +100C | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | 3 | A | 2 | |||
| Pulsed Drain Current | IDM | 80 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Avalanche Energy | EAS | 147 | mJ | L = 60mH | 2 | ||
| Total Power Dissipation (Note 5) | PD | 2.6 | W | TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 47 | °C/W | Note 5 | 2 | ||
| Total Power Dissipation (Note 6) | PD | 119 | W | TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.26 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 64V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.3 | 3 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 12.1 | 16 | mΩ | VGS = 10V, ID = 12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14.8 | 21 | mΩ | VGS = 4.5V, ID = 6A | 2 | |
| Diode Forward Voltage | VSD | 0.9 | 1.2 | V | VGS = 0V, IS = 25A | 2 | |
| Input Capacitance | Ciss | 1949 | pF | VDS = 40V, VGS = 0V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 177 | pF | VDS = 40V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 10 | pF | VDS = 40V, VGS = 0V, f = 1MHz | 2 | ||
| Gate Resistance | Rg | 0.7 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 15 | nC | VDS = 40V, ID = 12A | 2 | ||
| Total Gate Charge (VGS = 10V) | Qg | 34 | nC | VDS = 40V, ID = 12A | 2 | ||
| Gate-Source Charge | Qgs | 6 | nC | VDS = 40V, ID = 12A | 2 | ||
| Gate-Drain Charge | Qgd | 4.5 | nC | VDS = 40V, ID = 12A | 2 | ||
| Turn-On Delay Time | tD(ON) | 4.9 | ns | VDD = 40V, VGS = 10V, ID = 12A, RG = 1.6Ω | 2 | ||
| Turn-On Rise Time | tR | 3.8 | ns | VDD = 40V, VGS = 10V, ID = 12A, RG = 1.6Ω | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 16.5 | ns | VDD = 40V, VGS = 10V, ID = 12A, RG = 1.6Ω | 2 | ||
| Turn-Off Fall Time | tF | 3.5 | ns | VDD = 40V, VGS = 10V, ID = 12A, RG = 1.6Ω | 2 | ||
| Body Diode Reverse-Recovery Time | tRR | 30.2 | ns | IF = 12A, di/dt = 100A/μs | 2 | ||
| Body Diode Reverse-Recovery Charge | Qrr | 34.6 | nC | IF = 12A, di/dt = 100A/μs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | IF = 12A, di/dt = 100A/μs Body Diode Reverse-Recovery Charge Qrr, 34.6, nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. | 2 | |
| contacts | Copper | tin | • Terminal Finish - Matte Tin Annealed over Copper Leadframe; | 1 |
CAD (KiCad official)
- Symbol:
DMTH8012LK3-13 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
dmth8012lk3-13-etched.step/dmth8012lk3-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmth8012lk3-13.step/dmth8012lk3-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
b0ae8f5050773225, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).