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CXT5401

Public Made by Adom

by adom

MSKSEMI Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorcxt5401factory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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CXT5401

MSKSEMI · Bipolar Transistors - BJT · SOT-89

CXT5401 from MSKSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives VEBO of -5 V maximum and IEBO of -50 nA at VEB=-3 V.
2 COLLECTOR passive Collector terminal of the PNP transistor; rated VCBO -160 V, VCEO -150 V and continuous IC -0.5 A.
3 EMITTER passive Emitter terminal of the PNP transistor; the datasheet gives VEBO of -5 V maximum between emitter and base.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-89
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -160 V Ta=25℃ 2
Collector-Emitter Voltage VCEO -150 V Ta=25℃ 2
Emitter-Base Voltage VEBO -5 V Ta=25℃ 2
Collector Current - Continuous IC -0.5 A Ta=25℃ 2
Collector Power Dissipation PC 0.5 W Ta=25℃ 2
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 2
Collector-base breakdown voltage V(BR)CBO -160 V IC= -100μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -150 V IC = -1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -10μA, IC=0 2
Collector cut-off current ICBO -50 nA VCB = -120 V, IE=0 2
Emitter cut-off current IEBO -50 nA VEB= -3V, IC=0 2
DC current gain hFE(1) 50 VCE= -5V, IC=-1 mA 2
DC current gain hFE(2) 100 300 VCE= -5V, IC= -10 mA 2
Collector-emitter saturation voltage VCE(sat) -0.2 V IC= -10 mA, IB= -1 mA 2
Collector-emitter saturation voltage VCE(sat) -0.5 V IC= -50 mA, IB= -5 mA 2
Base-emitter saturation voltage VBE(sat) -1 V IC= -10 mA, IB= -1 mA 2
Transition frequency fT 100 300 MHz VCE= -10V, IC= -10mA, f = 100MHz 2
Output Capacitance Cob 6 pF VCB=-10V, IE= 0,f=1MHz 2
Noise Figure NF 8 dB VCE= -5.0V, IC= -200μA, RS= 10Ω,f =10Hz to15.7kHz 2
Thermal Resistance From Junction To Ambient RθJA 250 ℃/W 2

CAD (KiCad official)

  • Symbol: CXT5401
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: cxt5401-etched.step / cxt5401-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cxt5401.step / cxt5401.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 18db72206281149b, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF