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SI3129DV-T1-GE3

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI3129DV-T1-GE3

Vishay Intertech · MOSFETs · TSOP-6

SI3129DV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the P-channel MOSFET, rated for VDS of -80 V and tied to the same drain as pins 2, 5 and 6.
2 D passive Drain of the P-channel MOSFET, rated for VDS of -80 V and tied to the same drain as pins 1, 5 and 6.
3 G input Gate of the P-channel MOSFET, with a VGS rating of ±20 V and a threshold of -1.5 V to -2.5 V.
4 S passive Source of the P-channel MOSFET, with continuous source-drain diode current of -3.5 A at TC = 25 °C.
5 D passive Drain of the P-channel MOSFET, rated for VDS of -80 V and tied to the same drain as pins 1, 2 and 6.
6 D passive Drain of the P-channel MOSFET, rated for VDS of -80 V and tied to the same drain as pins 1, 2 and 5.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -80 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID -5.4 A TC = 25 °C 1
Continuous drain current ID -4.4 A TC = 70 °C 1
Continuous drain current ID -3.8 A TA = 25 °C, notes b, c 1
Continuous drain current ID -3 A TA = 70 °C, notes b, c 1
Pulsed drain current IDM -20 A t = 300 μs 1
Continuous source-drain diode current IS -3.5 A TC = 25 °C 1
Continuous source-drain diode current IS -1.7 A TA = 25 °C, notes b, c 1
Single pulse avalanche current IAS 15 L = 0.1 mH 1
Single pulse avalanche energy EAS 11 L = 0.1 mH 1
Maximum power dissipation PD 4.2 W TC = 25 °C 1
Maximum power dissipation PD 2.7 W TC = 70 °C 1
Maximum power dissipation PD 2 W TA = 25 °C, notes b, c 1
Maximum power dissipation PD 1.3 W TA = 70 °C, notes b, c 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 45 62.5 °C/W t ≤ 5 s, notes b, d 1
Maximum junction-to-ambient, steady state (note d) RthJA 110 °C/W Steady state, per note d 1
Maximum junction-to-foot (drain), steady state RthJF 25 30 °C/W Steady state 1
Drain-source breakdown voltage VDS -80 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -1.5 -2.5 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero gate voltage drain current IDSS -10 μA VDS = -80 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -50 μA VDS = -80 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) -5 A VDS ≤ -5 V, VGS = -10 V 2
Drain-source on-state resistance RDS(on) 0.0689 0.0827 Ω VGS = -10 V, ID = -3.8 A 2
Drain-source on-state resistance RDS(on) 0.0994 0.1242 Ω VGS = -4.5 V, ID = -3.1 A 2
Total gate charge Qg 12 18 nC VDS = -40 V, VGS = -10 V, ID = -3.8 A 2
Total gate charge Qg 5.6 8.4 nC VDS = -40 V, VGS = -4.5 V, ID = -3.8 A 2
Gate resistance Rg 0.8 4.4 8.8 Ω f = 1 MHz 2
Turn-on delay time td(on) 15 30 ns VDD = -40 V, RL = 13.3 Ω, ID ≈ -3 A, VGEN = -10 V, Rg = 1 Ω 2
Rise time tr 8 16 ns VDD = -40 V, RL = 13.3 Ω, ID ≈ -3 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 25 50 ns VDD = -40 V, RL = 13.3 Ω, ID ≈ -3 A, VGEN = -10 V, Rg = 1 Ω 2
Fall time tf 12 24 ns VDD = -40 V, RL = 13.3 Ω, ID ≈ -3 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-on delay time td(on) 28 56 ns VDD = -40 V, RL = 13.3 Ω, ID ≈ -3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time tr 42 84 ns VDD = -40 V, RL = 13.3 Ω, ID ≈ -3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 24 48 ns VDD = -40 V, RL = 13.3 Ω, ID ≈ -3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall time tf 15 30 ns VDD = -40 V, RL = 13.3 Ω, ID ≈ -3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous source-drain diode current IS -3.5 A TC = 25 °C 2
Pulse diode forward current ISM -20 A 2
Body diode voltage VSD -0.8 -1.2 V IS = -3 A, VGS = 0 V 2
Body diode reverse recovery time trr 38 57 ns IF = -3 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 50 75 nC IF = -3 A, dI/dt = 100 A/μs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI3129DV-T1-GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3129dv-t1-ge3-etched.step / si3129dv-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3129dv-t1-ge3.step / si3129dv-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 18dfbe4212568a02, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF