component
S8550-D
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownS8550-D
Foshan Blue Rocket Elec · Bipolar (BJT) · TO-92
S8550-D from Foshan Blue Rocket Elec, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Collector | passive | Collector of the PNP transistor, rated at VCBO -40 V and VCEO -25 V, with continuous collector current IC of -800 mA. |
| 2 | Base | passive | Base of the PNP transistor, with continuous base current IB rated at -200 mA. |
| 3 | Emitter | passive | Emitter of the PNP transistor, with emitter-to-base voltage VEBO rated at -6.0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | -40 | V | Ta=25℃ | 2 | ||
| Collector to Emitter Voltage | VCEO | -25 | V | Ta=25℃ | 2 | ||
| Emitter to Base Voltage | VEBO | -6 | V | Ta=25℃ | 2 | ||
| Collector Current - Continuous | IC | -800 | mA | Ta=25℃ | 2 | ||
| Base Current - Continuous | IB | -200 | mA | Ta=25℃ | 2 | ||
| Collector Power Dissipation | PC | 625 | mW | Ta=25℃ | 2 | ||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| hFE range, grade D (classification table) | hFE | 160 | 300 | 1 | |||
| Collector to Base Breakdown Voltage | VCBO | -40 | V | IC=-0.1mA IE=0 | 2 | ||
| Collector to Emitter Breakdown Voltage | VCEO | -25 | V | IC=-2.0mA IB=0 | 2 | ||
| Emitter to Base Breakdown Voltage | VEBO | -6 | V | IE=-0.1mA IC=0 | 2 | ||
| Collector Cut-Off Current | ICBO | -0.1 | μA | VCB=-35V IE=0 | 2 | ||
| Emitter Cut-Off Current | IEBO | -0.1 | μA | VEB=-6.0V IC=0 | 2 | ||
| DC Current Gain hFE(1) | hFE(1) | 85 | 300 | VCE=-1.0V IC=-100mA | 2 | ||
| DC Current Gain hFE(2) | hFE(2) | 40 | VCE=-1.0V IC=-500mA | 2 | |||
| DC Current Gain hFE(3) | hFE(3) | 45 | VCE=-1.0V IC=-5.0mA | 2 | |||
| Collector to Emitter Saturation Voltage | VCE(sat) | -0.28 | -0.6 | V | IC=-500mA IB=-50mA | 2 | |
| Base to Emitter Saturation Voltage | VBE(sat) | -0.98 | -1.2 | V | IC=-500mA IB=-50mA | 2 | |
| Base to Emitter Voltage | VBE | -0.66 | -1 | V | VCE=-1.0V IC=-10mA | 2 | |
| Transition Frequency | fT | 100 | 200 | MHz | VCE=-10V IC=-50mA | 2 | |
| Collector Output Capacitance | Cob | 15 | pF | VCB=-10V IE=0 f=1.0MHz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. PC,IC大,与 S8050 互补。 | 1 |
CAD (KiCad official)
- Symbol:
S8550-D - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
s8550-d-etched.step/s8550-d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8550-d.step/s8550-d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
a5cb715927469dd1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).