component
BSS138AKDW
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS138AKDW
ElecSuper · MOSFETs · SOT-363
BSS138AKDW from ElecSuper, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source1 | passive | Source terminal of MOSFET 1 (S1) in the dual N-channel device; the datasheet gives no pin-specific electrical limits, only device ratings such as BVDSS 60 V and VGS ±20 V. |
| 2 | Gate1 | input | Gate terminal of MOSFET 1 (G1); the gate-source voltage limit for the device is VGS ±20 V, and the datasheet gives no pin-specific limit. |
| 3 | Drain2 | passive | Drain terminal of MOSFET 2 (D2) in the dual N-channel device; the datasheet gives no pin-specific electrical limits, only device ratings such as BVDSS 60 V and ID 0.41 A. |
| 4 | Source2 | passive | Source terminal of MOSFET 2 (S2) in the dual N-channel device; the datasheet gives no pin-specific electrical limits, only device ratings such as BVDSS 60 V and VGS ±20 V. |
| 5 | Gate2 | input | Gate terminal of MOSFET 2 (G2); the gate-source voltage limit for the device is VGS ±20 V, and the datasheet gives no pin-specific limit. |
| 6 | Drain1 | passive | Drain terminal of MOSFET 1 (D1) in the dual N-channel device; the datasheet gives no pin-specific electrical limits, only device ratings such as BVDSS 60 V and ID 0.41 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-363 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=10mA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=60V, VGS=0V, TJ=25℃ | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | uA | VDS=40V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-to-source Leakage Current | IGSS | -10 | 10 | uA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 0.8 | 1 | 1.5 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 1.5 | 2 | Ω | VGS=10V, ID=0.5A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 1.6 | 2.5 | Ω | VGS=4.5V, ID=0.2A | 3 | |
| Input Capacitance | CISS | 25 | 50 | pF | VGS=0V, f=1MHz, VDS=25V | 3 | |
| Output Capacitance | COSS | 9.7 | 22 | pF | VGS=0V, f=1MHz, VDS=25V | 3 | |
| Reverse Transfer Capacitance | CRSS | 2.2 | 5 | pF | VGS=0V, f=1MHz, VDS=25V | 3 | |
| Total Gate Charge | QG(TOT) | 0.65 | 1 | nC | VGS=4.5V, VDS=25V, ID=0.25A | 3 | |
| Gate-to-Source Charge | QGS | 0.2 | nC | VGS=4.5V, VDS=25V, ID=0.25A | 3 | ||
| Gate-to-Drain Charge | QGD | 0.23 | nC | VGS=4.5V, VDS=25V, ID=0.25A | 3 | ||
| Turn-On Delay Time | td(ON) | 2.3 | 5 | ns | VGS=10V, VDS=25V, ID=0.5A, RG=6Ω | 3 | |
| Rise Time | tr | 19.2 | 40 | ns | VGS=10V, VDS=25V, ID=0.5A, RG=6Ω | 3 | |
| Turn-Off Delay Time | td(OFF) | 6.3 | 12 | ns | VGS=10V, VDS=25V, ID=0.5A, RG=6Ω | 3 | |
| Fall Time | tf | 23 | 50 | ns | VGS=10V, VDS=25V, ID=0.5A, RG=6Ω | 3 | |
| Forward Voltage | VSD | 0.86 | 1.5 | V | VGS=0V, IS=0.5A | 3 | |
| Drain-Source Voltage | BVDSS | 60 | V | Ta=25℃ ambient unless otherwise specified | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25℃ ambient unless otherwise specified | 2 | |
| Continuous Drain Current | ID | 0.41 | A | Ta=25℃ ambient unless otherwise specified | 2 | ||
| Maximum Power Dissipation | PD | 417 | mW | Ta=25℃ ambient unless otherwise specified | 2 | ||
| Pulsed Drain Current | IDM | 1.64 | A | Repetitive, tp=10μs, Duty Cycle=1% | 2 | ||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 300 | °C/W | Single operation | 2 |
CAD (KiCad official)
- Symbol:
BSS138AKDW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bss138akdw-etched.step/bss138akdw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss138akdw.step/bss138akdw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (7 pp, sha256
ae2ffeec5d450c76, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).