VBK3215N from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of MOSFET 1 (N-channel, VDS 20 V, VGS ±12 V).
2	G1	input	Gate of MOSFET 1, with VGS limited to ±12 V and threshold of 0.5 V min to 2.0 V max.
3	D2	passive	Drain of MOSFET 2, rated 20 V drain-source with continuous current of 2.6 A at TC = 25 °C.
4	S2	passive	Source of MOSFET 2 (N-channel, VDS 20 V, VGS ±12 V).
5	G2	input	Gate of MOSFET 2, with VGS limited to ±12 V and threshold of 0.5 V min to 2.0 V max.
6	D1	passive	Drain of MOSFET 1, rated 20 V drain-source with continuous current of 2.6 A at TC = 25 °C.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SC-70-6
Category	Transistors
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			20	V		1
Gate-Source Voltage	VGS	-12		12	V		1
Continuous Drain Current	ID			2.6	A	TJ = 150 °C, TC = 25 °C	1
Continuous Drain Current	ID			2.2	A	TC = 70 °C	1
Continuous Drain Current	ID			2.3	A	TA = 25 °C	1
Continuous Drain Current	ID			1.8	A	TA = 70 °C	1
Pulsed Drain Current	IDM			8	A		1
Continuous Source-Drain Diode Current	IS			2.3	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			2.1	A	TA = 25 °C	1
Maximum Power Dissipation	PD			2.7	W	TC = 25 °C	1
Maximum Power Dissipation	PD			1.7	W	TC = 70 °C	1
Maximum Power Dissipation	PD			1.5	W	TA = 25 °C	1
Maximum Power Dissipation	PD			1	W	TA = 70 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient	RthJA		130	170	°C/W	t ≤ 5 s	1
Maximum Junction-to-Ambient (steady state, note d)	RthJA			220	°C/W	Steady state (note d)	1
Maximum Junction-to-Foot (Drain)	RthJF		80	100	°C/W	Steady State	1
Drain-Source Breakdown Voltage	VDS	20			V	VGS = 0 V, ID = 250 µA	2
VDS Temperature Coefficient	ΔVDS/TJ		20		mV/°C	ID = 250 µA	2
VGS(th) Temperature Coefficient	ΔVGS(th)/TJ		-2.3		mV/°C		2
Gate-Source Threshold Voltage	VGS(th)	0.5		2	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-25		25	µA	VDS = 0 V, VGS = ± 8 V	2
Gate-Source Leakage	IGSS			1	µA	VDS = 0 V, VGS = ± 4.5 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 20 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 20 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	4			A	VDS ≤ 5 V, VGS = 4.5 V	2
Drain-Source On-State Resistance	RDS(on)			0.086	Ω	VGS = 4.5 V, ID = 1 A	2
Drain-Source On-State Resistance	RDS(on)			0.11	Ω	VGS = 2.5 V, ID = 1 A	2
Drain-Source On-State Resistance	RDS(on)			0.18	Ω	VGS = 1.8 V, ID = 0.2 A	2
Gate Resistance	Rg	0.4	1.9	3.8	kΩ	f = 1 MHz	2
Turn-On Delay Time (VGEN = 4.5 V)	td(on)		43	65	ns	VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time (VGEN = 4.5 V)	tr		80	120	ns	VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time (VGEN = 4.5 V)	td(off)		480	720	ns	VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω	2
Fall Time (VGEN = 4.5 V)	tf		220	330	ns	VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-on Delay Time (VGEN = 8 V)	td(on)		22	33	ns	VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω	2
Rise Time (VGEN = 8 V)	tr		46	70	ns	VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω	2
Turn-Off Delay Time (VGEN = 8 V)	td(off)		645	968	ns	VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω	2
Fall Time (VGEN = 8 V)	tf		215	323	ns	VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω	2
Pulse Diode Forward Current	ISM			4	A		2
Continuous Source-Drain Diode Current (electrical table)	IS			2.6	A	TC = 25 °C	2
Body Diode Voltage	VSD		0.8	1.2	V	IS = 1.2 A, VGS = 0 V	2
Body Diode Reverse Recovery Charge	Qrr		2	4	nC	IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C	2

CAD (KiCad official)

Symbol: VBK3215N
Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
3D model: SC-70-6 (KiCad packages3D, STEP)
3D model files: vbk3215n-etched.step / vbk3215n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbk3215n.step / vbk3215n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (8 pp, sha256 d787e9e3b9ec66d8, retrieved 2026-10-30, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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VBK3215N

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