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Contents

README

markdown

DS18B20-MS

MSKSEMI · Temperature Sensors · TO-92

DS18B20-MS from MSKSEMI, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground pin for the DS18B20 (TO-92 pin 1, 1-Wire bus and supply return).
2 DQ bidirectional Data input/output pin of the 1-Wire bus; it needs an external pull-up (about 4.7 kΩ to 5 kΩ shown in the datasheet) and also powers the chip in parasitic mode, where a strong pull-up is required during temperature conversion and EEPROM copy.
3 VDD power_in Supply pin, 2.5 V to 5.5 V in local-supply mode; it must be connected to GND when the device runs in parasitic power mode.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-92
Category Sensors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
各引脚对地电压范围 -0.5 6 V 各引脚对地的电压范围 20
工作温度范围 -55 125 ℃ 20
储存范围 -55 125 ℃ 20
供电电压 VDD 2.5 5.5 V 局部供电 20
上拉供电电压 (寄生供电) VPU 2.5 5.5 V 寄生供电 20
上拉供电电压 (局部供电) VPU 2.5 V 局部供电 20
输入逻辑低电平 VIL -0.3 0.8 V 20
输入逻辑高电平 (局部供电) VIH 2.2 5.5 V 局部供电 20
输入逻辑高电平 (寄生供电) VIH 2.5 V 寄生供电 20
灌电流 IL 4 mA VI/O = 0.4V 20
待机电流 IDDS 750 1000 nA note 7: 70℃; note 8: GND ≤ DQ ≤ GND+0.3V or VDD−0.3V ≤ DQ ≤ VDD 20
工作电流 IDD 1 1.5 mA VDD = 5V 20
温度误差 (-10℃~+85℃) tERR -0.4 0.4 ℃ -10℃~+85℃ 20
温度误差 (-55℃~+125℃) tERR -1.2 1.2 ℃ -55℃~+125℃ 20
漂移 -0.2 0.2 ℃ note 11: after 1000 h at +125℃, VDD = 5.5V 20
温度转换时间 (9-bit) tCONV 50 ms 9-bit resolution 21
温度转换时间 (10-bit) tCONV 100 ms 10-bit resolution 21
温度转换时间 (11-bit) tCONV 200 ms 11-bit resolution 21
温度转换时间 (12-bit) tCONV 400 ms 12-bit resolution 21
Time to Strong Pullup On tSPON 10 µs Start Convert T Command Issued 21
Time Slot tSLOT 60 120 µs 21
Recovery Time tREC 1 µs 21
Write 0 Low Time tLOW0 60 120 µs 21
Write 1 Low Time tLOW1 1 15 µs 21
Read Data Valid tRDV 15 µs 21
Reset Time High tRSTH 480 µs 21
Presence-Detect High tPDHIGH 15 60 µs 21
Presence-Detect Low tPDLOW 60 240 µs 21
NV Write Cycle Time tWR 8 12 ms 21
EEPROM Writes NEEWR 1000 writes -55°C to +55°C 21
EEPROM Data Retention tEEDR 10 years -55°C to +55°C 21

CAD (KiCad official)

  • Symbol: DS18B20-MS
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: ds18b20-ms-etched.step / ds18b20-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ds18b20-ms.step / ds18b20-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (27 pp, sha256 e6f402932e96c15e, retrieved 2026-10-19, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF