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Contents

README

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TPCA8120

TOSHIBA(东芝) · IC · SOP-8

TPCA8120 from TOSHIBA(东芝), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the P-channel MOSFET (VDSS = -30 V).
2 Source passive Source terminal of the P-channel MOSFET (VDSS = -30 V).
3 Source passive Source terminal of the P-channel MOSFET (VDSS = -30 V).
4 Gate input Gate terminal; gate-source voltage is rated -25 V / +20 V (VGSS).
5 Drain passive Drain terminal of the P-channel MOSFET; DC drain current is rated -45 A.
6 Drain passive Drain terminal of the P-channel MOSFET; DC drain current is rated -45 A.
7 Drain passive Drain terminal of the P-channel MOSFET; DC drain current is rated -45 A.
8 Drain passive Drain terminal of the P-channel MOSFET; DC drain current is rated -45 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA(东芝)
Package SOP-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS -30 V Ta = 25 unless otherwise specified 1
Gate-source voltage VGSS -25 20 V Ta = 25 unless otherwise specified 1
Drain current (DC) ID -45 A 1
Drain current (pulsed) IDP -135 A 1
Power dissipation PD 45 W Tc = 25 1
Power dissipation PD 2.8 W t = 10 s, Note 2 1
Power dissipation PD 1.6 W t = 10 s, Note 3 1
Single-pulse avalanche energy EAS 263 mJ VDD = -24 V, Tch = 25 (initial), L = 0.1 mH, RG = 25 Ω, IAR = -45 A 1
Avalanche current IAR -45 A 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Channel-to-case thermal resistance Rth(ch-c) 2.78 °C/W Tc = 25 2
Channel-to-ambient thermal resistance Rth(ch-a) 44.6 °C/W t = 10 s, Note 2 2
Channel-to-ambient thermal resistance Rth(ch-a) 78.1 °C/W t = 10 s, Note 3 2
Gate leakage current IGSS -0.1 0.1 µA VGS = ±20 V, VDS = 0 V 3
Drain cut-off current IDSS -10 µA VDS = -30 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS -30 V ID = -10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX -21 V ID = -10 mA, VGS = 10 V 3
Gate threshold voltage Vth -0.8 -2 V VDS = -10 V, ID = -1 mA 3
Drain-source on-resistance RDS(ON) 3.1 4 mΩ VGS = -4.5 V, ID = -22.5 A 3
Drain-source on-resistance RDS(ON) 2.4 3 mΩ VGS = -10 V, ID = -22.5 A 3
Reverse drain current (pulsed) IDRP -135 A 3
Diode forward voltage VDSF 1.2 V IDR = -45 A, VGS = 0 V 3

CAD (KiCad official)

  • Symbol: TPCA8120
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tpca8120-etched.step / tpca8120-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpca8120.step / tpca8120.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA(东芝) datasheet (8 pp, sha256 190b5f0373ca2ef0, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF