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Contents

README

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AS3D020120P2

AnBon · SiC Diodes · TO-247-3

AS3D020120P2 from AnBon, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first Schottky diode leg, rated 1200 V VRRM and 13 A per leg at TC ≤ 135°C.
2 K passive Common cathode of both diode legs, connected internally to the case (CASE) as shown in the pin diagram.
3 A2 passive Anode of the second Schottky diode leg, rated 1200 V VRRM and 13 A per leg at TC ≤ 135°C.

Key specifications

Parameter Value
Manufacturer AnBon
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Voltage VF 1.55 2.2 V IF = 10A, TJ = 25℃ 2
Forward Voltage VF 1.8 2.5 V IF = 10A, TJ = 175℃ 2
Reverse Current IR 2 10 µA VR = 1200V, TJ = 25℃ 2
Reverse Current IR 20 200 µA VR = 1200V, TJ = 175℃ 2
Repetitive Peak Reverse Voltage VRRM 1200 V TC = 25℃ 2
Surge Peak Reverse Voltage VRSM 1200 V TC = 25℃ 2
DC Blocking Voltage VR 1200 V TC = 25℃ 2
Forward Current (Per leg) IF 30 A TC ≤ 25℃, per leg 2
Forward Current (Per device) IF 60 A TC ≤ 25℃, per device 2
Forward Current (Per leg) IF 13 A TC ≤ 135℃, per leg 2
Forward Current (Per device) IF 26 A TC ≤ 135℃, per device 2
Forward Current (Per leg) IF 10 A TC ≤ 149℃, per leg 2
Forward Current (Per device) IF 20 A TC ≤ 149℃, per device 2
Non-Repetitive Forward Surge Current IFSM 95 A TC = 25℃, tp = 8.3ms, Half Sine Wave, per leg 2
Power Dissipation (Per leg) Ptot 150 W TC = 25℃, Fig.3, per leg 2
Power Dissipation (Per device) Ptot 300 W TC = 25℃, Fig.3, per device 2
Maximum Case Temperature TC 149 ℃ 2
Operating Junction and Storage Temperature TJ, TSTG -55 175 ℃ 2
Thermal Resistance from Junction to Case (Per leg) RθJC 1 ℃/W Per leg; Fig.6 2
Thermal Resistance from Junction to Case (Per device) RθJC 0.5 ℃/W Per device; Fig.6 2
Thermal Resistance from Junction to Ambient RθJA 80 ℃/W 2
Soldering Temperature Tsold 260 ℃ 2

CAD (KiCad official)

  • Symbol: AS3D020120P2
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: as3d020120p2-etched.step / as3d020120p2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); as3d020120p2.step / as3d020120p2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AnBon datasheet (5 pp, sha256 4c595a664c8cc504, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF