component
LESD5Z5.0CT1G-HXY
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), SOD-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLESD5Z5.0CT1G-HXY
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOD-523
LESD5Z5.0CT1G-HXY from HXY MOSFET, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Terminal 1 of the bi-directional ESD protection diode (shown next to the marked band on the package top view); working voltage 5.0 V, breakdown 5.6 V min at 1 mA, clamping 8.0 V at IPP = 6 A (8/20 µs). |
| 2 | A2 | passive | Terminal 2 of the bi-directional ESD protection diode; protects one Vcc or data line with ±30 kV IEC 61000-4-2 contact and air discharge rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-523 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD withstand, IEC61000-4-2 contact discharge | -30 | 30 | kV | IEC61000-4-2 contact discharge; printed ±30 | 1 | ||
| ESD withstand, IEC61000-4-2 air discharge | -30 | 30 | kV | IEC61000-4-2 air discharge; printed ±30 | 1 | ||
| EFT surge current, IEC61000-4-4 | 40 | A | IEC61000-4-4 (EFT), 5/50 ns | 1 | |||
| Peak pulse power dissipation | PPP | 48 | W | tp = 8/20 µs (value from features list) | 1 | ||
| Storage temperature range | Tstg | -55 | 155 | °C | 1 | ||
| Operating temperature range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10 s | 1 | ||
| Reverse breakdown voltage | VBR | 5.6 | V | IT = 1 mA | 2 | ||
| Reverse leakage current | IR | 0.1 | µA | VRWM = 5.0 V | 2 | ||
| Junction capacitance | CJ | 12 | pF | VR = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
LESD5Z5.0CT1G-HXY - Footprint:
Diode_SMD:D_SOD-523 - 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files:
lesd5z5-0ct1g-hxy-etched.step/lesd5z5-0ct1g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lesd5z5-0ct1g-hxy.step/lesd5z5-0ct1g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
addd44ded3a3808d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).