component
DMN3110SQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMN3110SQ-7
Diodes Incorporated · MOSFETs · SOT-23
DMN3110SQ-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V with threshold VGS(TH) of 1.0V to 3.0V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with body diode forward voltage of 1.0V max at IS = 1A. |
| 3 | D | passive | Drain; drain-source voltage rated 30V with pulsed drain current up to 25A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current (Note 6), steady state | ID | 2.5 | A | VGS = 10V, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 6), steady state | ID | 2 | A | VGS = 10V, TA = +70°C | 2 | ||
| Continuous Drain Current (Note 6), steady state | ID | 3.3 | A | VGS = 4.5V, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 6), steady state | ID | 2.7 | A | VGS = 4.5V, TA = +70°C | 2 | ||
| Continuous Drain Current (Note 7) | ID | 3.8 | A | VGS = 10V, t≦10sec, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 7) | ID | 3.1 | A | VGS = 10V, t≦10sec, TA = +70°C | 2 | ||
| Continuous Drain Current (Note 7), steady state | ID | 2.7 | A | VGS = 4.5V, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 7), steady state | ID | 2.1 | A | VGS = 4.5V, TA = +70°C | 2 | ||
| Pulsed Drain Current (Note 8) | IDM | 25 | A | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Total Power Dissipation (Note 6) | PD | 0.74 | W | TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 173.4 | °C/W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 7) | PD | 1.3 | W | TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | 99.1 | °C/W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 7) | PD | 1.8 | W | t≦10sec | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | 72 | °C/W | t≦10sec | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 30V, VGS = 0V, TC = +25°C | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 54 | 73 | mΩ | VGS = 10V, ID = 3.1A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 88 | 110 | mΩ | VGS = 4.5V, ID = 2A | 2 | |
| Diode Forward Voltage (Note 7) | VSD | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 | |
| Forward Transfer Admittance | /Yfs/ | 4.8 | mS | VDS = 10V, ID = 3.1A | 2 | ||
| Input Capacitance | Ciss | 305.8 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 39.9 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 39.5 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 1.4 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 4.1 | nC | VDS = 10V, ID = 3A | 2 | ||
| Total Gate Charge (VGS = 10V) | Qg | 8.6 | nC | VDS = 10V, ID = 3A | 2 | ||
| Gate-Source Charge | Qgs | 1.2 | nC | VDS = 10V, ID = 3A | 2 | ||
| Gate-Drain Charge | Qgd | 1.5 | nC | VDS = 10V, ID = 3A | 2 | ||
| Turn-On Delay Time | tD(ON) | 2.6 | ns | VDD = 15V, VGS = 10V, RL = 47Ω, RG = 3Ω | 2 | ||
| Turn-On Rise Time | tR | 4.6 | ns | VDD = 15V, VGS = 10V, RL = 47Ω, RG = 3Ω | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 13.1 | ns | VDD = 15V, VGS = 10V, RL = 47Ω, RG = 3Ω | 2 | ||
| Turn-Off Fall Time | tF | 2.5 | ns | VDD = 15V, VGS = 10V, RL = 47Ω, RG = 3Ω | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper | 1 |
CAD (KiCad official)
- Symbol:
DMN3110SQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn3110sq-7-etched.step/dmn3110sq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn3110sq-7.step/dmn3110sq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
c568cd09f41ae9c5, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).