component
CMP70N06-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMP70N06-VB
VBsemi Elec · MOSFETs · TO-220AB
CMP70N06-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage is rated ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain pin; continuous drain current is rated 60 A at TC = 25 °C with a junction temperature limit of 175 °C. |
| 3 | S | passive | Source pin; continuous source (diode conduction) current is rated 50 A, with pulsed drain current up to 200 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TJ = 175 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 50 | A | 1 | |||
| Avalanche Current | IAS | 50 | A | 1 | |||
| Single Avalanche Energy | EAS | 125 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10 sec) | RthJA | 15 | 18 | °C/W | t 10 sec | 1 | |
| Maximum Junction-to-Ambient (Steady State) | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Case | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Static Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 60 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Pulsed Current | ISM | 60 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | 1.5 | V | IF = 20 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 45 | 100 | ns | IF = 20 A, di/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
CMP70N06-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
cmp70n06-vb-etched.step/cmp70n06-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmp70n06-vb.step/cmp70n06-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
323892b99c7175f7, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).