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Contents

README

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ZXMP6A17KTC-VB

VBsemi Elec · MOSFETs · TO-252

ZXMP6A17KTC-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET. VGS absolute max ±20 V; gate threshold voltage VGS(th) typ -2.0 V (min -1.0 V, max -3.0 V). Gate resistance Rg typ 8.0 Ω at 1 MHz; total gate charge Qg typ 10 nC at VDS = -30 V, VGS = -10 V.
2 D passive Drain of the P-channel MOSFET. Drain-Source Breakdown Voltage V(BR)DSS = -60 V; continuous drain current ID = -30 A at TC = 25 °C, -25 A at TC = 100 °C; pulsed drain current IDM = -30 A. Drain is electrically connected to the tab.
3 S passive Source of the P-channel MOSFET. Continuing source current (body-diode conduction) IS = -20 A; body-diode forward voltage VSD typ -0.9 V (max -1.3 V) at IF = -2 A, VGS = 0 V; reverse recovery time trr typ 50 ns.
TAB D passive Exposed metal tab, internally connected to the Drain. Used as the primary thermal path - with 1"x1" FR-4 copper mounting the junction-to-ambient thermal resistance RthJA is 62 °C/W (steady state) / 20 °C/W (t ≤ 10 s); RthJC is 5 °C/W typical.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • ZXMP6A17KTC-VB

CAD (KiCad official)

  • Symbol: ZXMP6A17KTC-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 1cefedbe6ede3db4, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF