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Contents

README

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ZXTN2018FTA

Diodes Incorporated · Bipolar (BJT) · SOT-23

ZXTN2018FTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO is limited to 7 V and continuous base current IB to 1 A.
2 E passive Emitter of the NPN transistor; connects to the load return or ground in typical low-side switching.
3 C passive Collector of the NPN transistor; VCEO 60 V, VCBO 140 V, continuous IC 5 A and peak ICM 12 A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 140 V 2
Collector-emitter voltage V(BR)CEV 140 V 2
Collector-emitter voltage VCEO 60 V 2
Emitter-base voltage VEBO 7 V 2
Peak pulse current ICM 12 A 2
Continuous collector current (a) IC 5 A (a) mounted on 18mm x 18mm FR4 PCB 2
Base current IB 1 A 2
Power dissipation (a) PD 1 W TA=25oC, (a) 18mm x 18mm FR4 PCB 2
Power dissipation (b) PD 1.2 W TA=25oC, (b) 30mm x 30mm FR4 PCB 2
Power dissipation (c) PD 1.56 W TA=25oC, (c) as (b), t<5secs 2
Operating and storage temperature Tj:Tstg -55 150 oC 2
Junction to ambient (a) RJA 125 oC/W (a) mounted on 18mm x 18mm FR4 PCB, still air 2
Junction to ambient (b) RJA 104 oC/W (b) mounted on 30mm x 30mm FR4 PCB, still air 2
Junction to ambient (c) RJA 80 oC/W (c) as (b), measured at t<5secs 2
Collector-base breakdown voltage V(BR)CBO 140 180 V IC=100A 4
Collector-emitter breakdown voltage V(BR)CEV 140 180 V IC=1A, -1V < VBE < +0.3V 4
Collector-emitter breakdown voltage V(BR)CEO 60 80 V IC=10mA (a) 4
Emitter-base breakdown voltage V(BR)EBO 78 V IE=100A 4
Collector-emitter cut-off current ICEV 20 nA VCE=110V, VBE = -1V 4
Collector-base cut-off current ICBO 20 nA VCB=110V 4
Emitter-base cut-off current IEBO 10 nA VEB=6V 4
Static forward current transfer ratio HFE 100 220 300 IC=10mA, VCE=1V (a) 4
Static forward current transfer ratio HFE 100 200 IC=2A, VCE=1V (a) 4
Static forward current transfer ratio HFE 40 65 IC=5A, VCE=1V (a) 4
Static forward current transfer ratio HFE 15 25 IC=10A, VCE=1V (a) 4
Collector-emitter saturation voltage VCE(sat) 15 30 mV IC=0.1A, IB=5mA (a) 4
Collector-emitter saturation voltage VCE(sat) 35 45 mV IC=1A, IB=100mA (a) 4
Collector-emitter saturation voltage VCE(sat) 40 55 mV IC=1A, IB=50mA (a) 4
Collector-emitter saturation voltage VCE(sat) 85 110 mV IC=2A, IB=50mA (a) 4
Collector-emitter saturation voltage VCE(sat) 145 170 mV IC=5A, IB=250mA (a) 4
Collector-emitter saturation voltage VCE(sat) 170 210 mV IC=6A, IB=300mA (a) 4
Base-emitter saturation voltage VBE(sat) 0.92 1 V IC=5A, IB=250mA (a) 4
Base-emitter turn-on voltage VBE(on) 0.85 0.95 V IC=5A, VCE=1V (a) 4

CAD (KiCad official)

  • Symbol: ZXTN2018FTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxtn2018fta-etched.step / zxtn2018fta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn2018fta.step / zxtn2018fta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 563bad4a47a4e3a7, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF