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AP9579GM-HF-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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AP9579GM-HF-VB

VBsemi Elec · MOSFETs · SO-8

AP9579GM-HF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, with continuous drain current of -10 A at TC = 25 °C and VDS rating of -60 V.
2 S passive Source of the P-channel MOSFET, tied to the same source as pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied to the same source as pins 1 and 2.
4 G input Gate of the P-channel MOSFET, with gate-source voltage limit of ±20 V and threshold of -1 to -3 V.
5 D passive Drain of the P-channel MOSFET, with drain-source voltage rating of -60 V and RDS(on) of 0.0250 Ω at VGS = -10 V.
6 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID -10 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -9 A TC = 70 °C, TJ = 150 °C 1
Continuous Drain Current ID -8 A TA = 70 °C, TJ = 150 °C 1
Pulsed Drain Current IDM -50 A 1
Avalanche Current Pulse IAS -45 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 101 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 69 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C 1
Maximum Power Dissipation PD 104.2 W TC = 25 °C 1
Maximum Power Dissipation PD 66.7 W TC = 70 °C 1
Maximum Power Dissipation PD 3.1 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 33 40 °C/W Steady State 1
Junction-to-Case Thermal Resistance RthJC 0.98 1.2 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -12 A VDS = - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.025 Ω VGS = - 10 V, ID = - 5 A 2
Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = - 4.5 V, ID = - 5A 2
Forward Transconductance gfs 20 S VDS = - 15 V, ID = - 10 A 2
Total Gate Charge Qg 76 115 nC VDS = - 30 V, VGS = - 10 V 2
Total Gate Charge Qg 38 60 nC VDS = - 30 V, VGS = - 4.5 V 2
Turn-On Delay Time td(on) 10 15 ns VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 7 15 ns VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 110 ns VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 40 60 ns VGEN = - 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -9 A TC = 25 °C 2
Pulse Diode Forward Current ISM -15 A 2
Body Diode Voltage VSD -1 -1.5 V IS = - 30 A 2
Body Diode Reverse Recovery Time trr 45 68 ns IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 59 120 nC IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ 68 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5.2 mV/°C 2
Input Capacitance Ciss 3500 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 390 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 290 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Gate Resistance Rg 5.2 Ω f = 1 MHz 2

CAD (KiCad official)

  • Symbol: AP9579GM-HF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ap9579gm-hf-vb-etched.step / ap9579gm-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap9579gm-hf-vb.step / ap9579gm-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 b38ad959cc207b34, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF