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Contents

README

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BSC070N10NS5-HXY

HXY MOSFET · MOSFETs · DFN-8(5x6)

BSC070N10NS5-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet rates the body diode at 75 A continuous and 300 A pulsed (IS, ISM).
2 S passive Source terminal of the N-channel MOSFET; the datasheet rates the body diode at 75 A continuous and 300 A pulsed (IS, ISM).
3 S passive Source terminal of the N-channel MOSFET; the datasheet rates the body diode at 75 A continuous and 300 A pulsed (IS, ISM).
4 G input Gate terminal; the gate-source voltage is rated at ±20 V maximum (VGS).
5 D passive Drain terminal; the drain-source voltage is rated at 100 V maximum (VDS) with 75 A continuous drain current.
6 D passive Drain terminal; the drain-source voltage is rated at 100 V maximum (VDS) with 75 A continuous drain current.
7 D passive Drain terminal; the drain-source voltage is rated at 100 V maximum (VDS) with 75 A continuous drain current.
8 D passive Drain terminal; the drain-source voltage is rated at 100 V maximum (VDS) with 75 A continuous drain current.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V, 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance (VGS=10V) RDS(on) 7.3 9.2 mΩ VGS=10V, ID=20A 2
Static Drain-Source on-Resistance (VGS=4.5V) RDS(on) 9 13.5 mΩ VGS=4.5V, ID=8A 2
Drain to Source Diode Forward Voltage VSD 1 V VGS=0V, IS=30A 2
Maximum Continuous Drain to Source Diode Forward Current IS 75 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 300 A 2
Drain source voltage VDS 100 V 1
Gate source voltage VGS -20 20 V 1
Continuous drain current ID 75 A 1
Pulsed drain current ID, pulse 300 A 1
Power dissipation PD 97 W 1
Single pulsed avalanche energy EAS 90 mJ 1
Operation and storage temperature Tstg,Tj -55 150 ℃ 1
Thermal resistance, junction-case RθJC 1.3 °C/W 1

CAD (KiCad official)

  • Symbol: BSC070N10NS5-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: bsc070n10ns5-hxy-etched.step / bsc070n10ns5-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc070n10ns5-hxy.step / bsc070n10ns5-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 86bc23a91284e38e, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF