HYG035N08NS2C2 from HUAYI, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source terminal of the N-channel MOSFET, pin 1 as marked on the package drawing; continuous drain current rating is 105A at Tc=25°C.
2	S	passive	Source terminal of the N-channel MOSFET, tied in parallel with the other source pins; body-diode source current is 105A continuous.
3	S	passive	Source terminal of the N-channel MOSFET, tied in parallel with the other source pins; drain-source voltage rating is 80V.
4	G	input	Gate terminal with a ±20V maximum gate-source voltage and a 2V to 4V threshold at 250μA.
5	D	passive	Drain terminal, 80V maximum drain-source voltage and 105A continuous current at Tc=25°C.
6	D	passive	Drain terminal, tied in parallel with the other drain pins; pulsed drain current is 420A at Tc=25°C.
7	D	passive	Drain terminal, tied in parallel with the other drain pins; RDS(ON) is 2.8mΩ typ. (3.5mΩ max) at VGS=10V, IDS=20A.
8	D	passive	Drain terminal, tied in parallel with the other drain pins; 80V drain-source breakdown voltage minimum at 250μA.
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	HUAYI
Package	DFN5x6-8
Category	Triode/MOS Tube/Transistor
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	80			V	VGS=0V,IDS= 250μA	2
Drain-to-Source Leakage Current	IDSS			1	μA	VDS= 80V,VGS=0V	2
Drain-to-Source Leakage Current	IDSS			50	μA	TJ=125°C	2
Gate Threshold Voltage	VGS(th)	2	3	4	V	VDS=VGS, IDS= 250μA	2
Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V,VDS=0V	2
Drain-Source On-State Resistance	RDS(ON)		2.8	3.5	mΩ	VGS= 10V,IDS=20A	2
Diode Forward Voltage	VSD		0.81	1.2	V	ISD=20A,VGS=0V	2
Drain-Source Voltage	VDSS			80	V		2
Gate-Source Voltage	VGSS	-20		20	V		2
Junction Temperature Range	TJ	-55		175	°C		2
Storage Temperature Range	TSTG	-55		175	°C		2
Source Current-Continuous (Body Diode)	IS			105	A	Tc=25°C, mounted on large heat sink	2
Pulsed Drain Current	IDM			420	A	Tc=25°C	2
Continuous Drain Current	ID			105	A	Tc=25°C	2
Continuous Drain Current	ID			74.2	A	Tc=100°C	2
Maximum Power Dissipation	PD			83.3	W	Tc=25°C	2
Maximum Power Dissipation	PD			41.7	W	Tc=100°C	2
Single Pulsed-Avalanche Energy	EAS			330	mJ	L=0.3mH	2
Thermal Resistance, Junction-to-Case	RθJC			1.8	°C/W		2
Thermal Resistance, Junction-to-Ambient	RθJA			45	°C/W	Surface mounted on 1in2 FR-4 board	2

CAD (KiCad official)

Symbol: HYG035N08NS2C2
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5x6-8 (KiCad packages3D, STEP)
3D model files: hyg035n08ns2c2-etched.step / hyg035n08ns2c2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg035n08ns2c2.step / hyg035n08ns2c2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HUAYI datasheet (9 pp, sha256 b0298cf6f43f7088, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

HYG035N08NS2C2

Verified HYG035N08NS2C2

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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