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Contents

README

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HGV8551MM

HGSEMI · Operational Amplifier · MSOP-8

HGV8551MM from HGSEMI, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected No connect; not internally connected per the HGV8551 SOP-8/MSOP-8 pin diagram.
2 INA- input Inverting input of the amplifier; input voltage range limited to VSS-0.5V to VDD+0.5V absolute maximum (VSS-0.1V to VDD+0.1V common-mode in normal operation).
3 INA+ input Non-inverting input of the amplifier; input voltage range limited to VSS-0.5V to VDD+0.5V absolute maximum (VSS-0.1V to VDD+0.1V common-mode in normal operation).
4 VSS power_in Negative supply or ground; for dual-supply operation (±0.9V to ±2.75V) bypass with a 0.1µF ceramic capacitor.
5 NC unconnected No connect; not internally connected per the HGV8551 SOP-8/MSOP-8 pin diagram.
6 OUT output Rail-to-rail amplifier output with about 65mA output current and 60mA short-circuit limit.
7 VDD power_in Positive supply, 1.8V to 5.5V single-supply (7.5V absolute maximum); place a 0.1µF ceramic bypass capacitor close to the pin.
8 NC unconnected No connect; not internally connected per the HGV8551 SOP-8/MSOP-8 pin diagram.

Key specifications

Parameter Value
Manufacturer HGSEMI
Package MSOP-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power Supply Voltage (VDD to Vss) VDD -0.5 7.5 V VDD to Vss 3
PDB Input Voltage 7 V Min printed as Vss-0.5V (expression, not numeric) 3
Operating Temperature Range TA -40 85 °C 3
Junction Temperature TJ 160 °C 3
Storage Temperature Range TSTG -55 150 °C 3
Lead Temperature 260 °C soldering, 10sec 3
ESD Susceptibility HBM 6 KV HBM 3
ESD Susceptibility MM 400 V MM 3
Single-Supply Operating Voltage VS 1.8 5.5 V Single-supply operation, from Features and Application Note (no operating-conditions table) 1
Input Offset Voltage VOS 1 30 µV 4
Input Offset Voltage Drift ΔVOS/ΔT 10 50 nV/℃ 4
Input Bias Current IB 20 pA 4
Input Offset Current IOS 10 pA 4
Common-Mode Rejection Ratio CMRR 110 dB VCM = 0V to 5V 4
Large Signal Voltage Gain AVO 145 dB RL = 10kΩ, VO = 0.3V to 4.7V 4
Output Voltage High VOH 4.998 V RL = 100kΩ to - VS 4
Output Voltage High VOH 4.994 V RL = 10kΩ to - VS 4
Output Voltage Low VOL 2 mV RL = 100kΩ to + VS 4
Output Voltage Low VOL 5 mV RL = 10kΩ to + VS 4
Short Circuit Limit ISC 60 mA RL =10Ω to - VS 4
Output Current IO 65 mA 4
Power Supply Rejection Ratio PSRR 115 dB VS = 2.5V to 5.5V 4
Quiescent Current IQ 180 µA VO = 0V, RL = 0Ω 4
Gain-Bandwidth Product GBP 1.8 MHz G = +100 4
Slew Rate SR 0.95 V/µs RL = 10kΩ 4
Overload Recovery Time 0.1 ms 4
Voltage Noise (en p-p) en p-p 0.3 µVP-P 0Hz to 10Hz 4
Voltage Noise Density en 38 nV Hz f = 1kHz 4
Package Thermal Resistance, junction-to-ambient (MSOP-8) θJA 216 °C/W TA=+25℃ 3

CAD (KiCad official)

  • Symbol: HGV8551MM
  • Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
  • 3D model: MSOP-8 (KiCad packages3D, STEP)
  • 3D model files: hgv8551mm-etched.step / hgv8551mm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hgv8551mm.step / hgv8551mm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HGSEMI datasheet (14 pp, sha256 5fbbb583df3651ad, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF