component
DSS4160T-7
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDSS4160T-7
Diodes Incorporated · Bipolar Transistors - BJT · SOT-23
DSS4160T-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; drives IC up to 1A continuous (2A peak), with absolute maximum base current IB of 300mA (IBM 1A peak) and VEBO of 5V. |
| 2 | E | passive | Emitter of the NPN transistor; maximum emitter-base voltage VEBO is 5V. |
| 3 | C | passive | Collector of the NPN transistor, the single lead on one side of the package; VCEO 60V, VCBO 80V, IC 1A continuous and ICM 2A peak. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 80 | V | IC = 100μA | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 60 | V | IC = 10mA | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE = 100μA | 4 | ||
| Collector-Base Cutoff Current | ICBO | 100 | nA | VCB = 60V, IE = 0 | 4 | ||
| Collector-Base Cutoff Current | ICBO | 50 | μA | VCB = 60V, IE = 0, TA = +150°C | 4 | ||
| Collector Cutoff Current | ICES | 100 | nA | VEB = 60V, IBE = 0 | 4 | ||
| Emitter-Base Cutoff Current | IEBO | 100 | nA | VEB = 5V, IC = 0 | 4 | ||
| DC Current Gain | hFE | 250 | VCE = 5V, IC = 1mA | 4 | |||
| DC Current Gain | hFE | 200 | VCE = 5V, IC = 500mA | 4 | |||
| DC Current Gain | hFE | 100 | VCE = 5V, IC = 1A | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 115 | mV | IC = 100mA, IB = 1mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 150 | mV | IC = 500mA, IB = 50mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 280 | mV | IC = 1A, IB = 100mA | 4 | ||
| Equivalent On-Resistance | RCE(sat) | 280 | mΩ | IE = 1A, IB = 100mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.1 | V | IC = 1A, IB = 50mA | 4 | ||
| Base-Emitter Turn-on Voltage | VBE(on) | 0.9 | V | VCE = 5V, IC = 1A | 4 | ||
| Transition Frequency | fT | 150 | MHz | VCE = 10V, IC = 50mA, f = 100MHz | 4 | ||
| Output Capacitance | Cobo | 10 | pF | VCB = 10V, f = 1MHz | 4 | ||
| Collector-Base Voltage | VCBO | 80 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 60 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 5 | V | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 1 | A | TA = +25°C | 2 | ||
| Peak Pulse Collector Current | ICM | 2 | A | TA = +25°C | 2 | ||
| Base Current | IB | 300 | mA | TA = +25°C | 2 | ||
| Peak Base Current | IBM | 1 | A | TA = +25°C | 2 | ||
| Power Dissipation | PD | 725 | mW | Note 6, TA = +25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| ESD Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| ESD Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 172 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Leads | RθJL | 79 | °C/W | Note 7 | 2 | ||
| Turn-On Time | ton | 63 | ns | VCC = 10V, IC = 0.5A, IB1 = -IB2 = 25mA | 4 | ||
| Delay Time | td | 33 | ns | VCC = 10V, IC = 0.5A, IB1 = -IB2 = 25mA | 4 | ||
| Rise Time | tr | 30 | ns | VCC = 10V, IC = 0.5A, IB1 = -IB2 = 25mA | 4 | ||
| Turn-Off Time | toff | 420 | ns | VCC = 10V, IC = 0.5A, IB1 = -IB2 = 25mA | 4 | ||
| Storage Time | ts | 380 | ns | VCC = 10V, IC = 0.5A, IB1 = -IB2 = 25mA | 4 | ||
| Fall Time | tf | 40 | ns | VCC = 10V, IC = 0.5A, IB1 = -IB2 = 25mA | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DSS4160T-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dss4160t-7-etched.step/dss4160t-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dss4160t-7.step/dss4160t-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
bb75a63cdfff433d, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).