component

VB4610N

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsvb4610nfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

VB4610N

VBsemi Elec · MOSFETs · TSOP-6

VB4610N from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of P-channel MOSFET 1, with gate-source voltage limited to ±20 V.
2 S2 passive Source of P-channel MOSFET 2; drain-source voltage rated -60 V.
3 G2 input Gate of P-channel MOSFET 2, with gate-source voltage limited to ±20 V.
4 D2 passive Drain of P-channel MOSFET 2; drain-source voltage -60 V, continuous drain current -4.5 A at TC = 25 °C.
5 S1 passive Source of P-channel MOSFET 1; drain-source voltage rated -60 V.
6 D1 passive Drain of P-channel MOSFET 1; drain-source voltage -60 V, continuous drain current -4.5 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -4.5 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID -4 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID -3.5 A TJ = 150 °C; TA = 25 °C; notes a, b 1
Continuous Drain Current ID -3 A TJ = 150 °C; TA = 70 °C; notes a, b 1
Pulsed Drain Current IDM -20 A t = 100 μs 1
Continuous Source-Drain Diode Current IS -3.9 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.1 A TA = 25 °C; notes a, b 1
Avalanche Current IAS -15 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 11.25 mJ 1
Maximum Power Dissipation PD 4.2 W TC = 25 °C 1
Maximum Power Dissipation PD 2.7 W TC = 70 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C; notes a, b 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C; notes a, b 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 100 130 °C/W t ≤ 5 s; surface mounted (note a) 1
Maximum junction-to-ambient, steady state RthJA 110 °C/W steady state; note c 1
Maximum junction-to-case (drain) RthJF 60 75 °C/W steady state 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 μA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 μA VDS = -60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS ≥ -10 V, VGS = -10 V 2
Total Gate Charge Qg 20 30 nC VDS = -30 V, VGS = -10 V, ID = -3.5 A 2
Total Gate Charge Qg 10.1 15.2 nC VDS = -30 V, VGS = -4.5 V, ID = -3.5 A 2
Gate Resistance Rg 1.8 9 18 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 8 16 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 6 12 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 35 53 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 16 24 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 40 60 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 28 42 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 31 47 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 15 23 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continous Source-Drain Diode Current IS -3.5 A TC = 25 °C 2
Pulse Diode Forward Current ISM -20 A t = 100 μs 2
Body Diode Voltage VSD -0.85 -1.2 V IS = -2.8 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 32 48 ns IF = -2.8 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 45 68 nC IF = -2.8 A, dI/dt = 100 A/μs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: VB4610N
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: vb4610n-etched.step / vb4610n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vb4610n.step / vb4610n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 c61f9a42f49ccdd0, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF