component
STP23N80K5
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP23N80K5
STMicroelectronics · MOSFETs · TO-220
STP23N80K5 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; Zener-protected with gate-source breakdown V(BR)GSO of ±30 V min and absolute maximum VGS of ±30 V, threshold 3 to 5 V at ID = 100 µA. |
| 2 | D | passive | Drain (also connected to the TAB); V(BR)DSS 800 V min, continuous drain current 16 A at Tcase = 25 °C and 64 A pulsed. |
| 3 | S | passive | Source; carries the source-drain body diode current of 16 A continuous and 64 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | VGS = 0 V, ID = 1 mA | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 800 V | 4 | ||
| Zero gate voltage drain current (Tcase = 125 °C) | IDSS | 50 | µA | VGS = 0 V, VDS = 800 V, Tcase = 125 °C | 4 | ||
| Gate-body leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±20 V | 4 | |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 4 |
| Static drain-source on-resistance | RDS(on) | 0.23 | 0.28 | Ω | VGS = 10 V, ID = 8 A | 4 | |
| Gate-source breakdown voltage | V(BR)GSO | -30 | V | IGS = ±1 mA, ID = 0 A | 5 | ||
| Source-drain current | ISD | 16 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 64 | A | 5 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 3 | ||
| Drain current (continuous) | ID | 16 | A | Tcase = 25 °C | 3 | ||
| Drain current (continuous) | ID | 10 | A | Tcase = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 64 | A | Pulse width is limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 190 | W | Tcase = 25 °C | 3 | ||
| Peak diode recovery voltage slope | dv/dt(2) | 4.5 | V/ns | ISD ≤ 16 A, di/dt = 100 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS | 3 | ||
| MOSFET dv/dt ruggedness | dv/dt(3) | 50 | V/ns | VDS ≤ 640 V | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 0.66 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 30 | °C/W | 3 | |||
| Avalanche current, repetitive or not repetitive | IAR | 5 | A | Pulse width limited by Tjmax | 3 | ||
| Single pulse avalanche energy | EAS | 400 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 3 |
CAD (KiCad official)
- Symbol:
STP23N80K5 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stp23n80k5-etched.step/stp23n80k5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp23n80k5.step/stp23n80k5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
6696bcc3f946d5df, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).