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Contents

README

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RS28N50W

REASUNOS · MOSFETs · TO-247-3

RS28N50W from REASUNOS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±30 V, threshold 3 to 4 V at ID=250 µA, gate leakage max ±100 nA.
2 D passive Drain (also connected to the tab); VDSS 500 V, continuous drain current 28 A at TC=25℃ and 15 A at TC=100℃, pulsed 112 A.
3 S passive Source; continuous body-diode source current 28 A, pulsed 112 A, diode forward voltage max 1.4 V at IS=14 A.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 500 V 1
Continuous Drain Current ID 28 A TC=25℃ 1
Continuous Drain Current ID 15 A TC=100℃ 1
Pulsed Drain Current IDM 112 A 1
Power Dissipation PD 120 W 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 520 mJ L = 10mH, VDD = 50V, RG = 25 Ω 1
Maximum Temperature for Soldering Leads TL 300 ℃ Leads at 0.063in(1.6mm) from case for 10 seconds 1
Maximum Temperature for Soldering Package Body TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 0.29 ℃/ W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 62 ℃/ W 1 cubic foot chamber, free air 2
Drain-to-Source Breakdown Voltage BVDSS 500 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=500V, VGS=0V 2
Gate-to-Source Forward Leakage Current IGSS 100 nA VGS=30V, VDS=0V 2
Gate-to-Source Reverse Leakage Current IGSS -100 nA VGS=-30V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 0.14 0.18 Ω VGS=10V, ID=14A 2
Gate Threshold Voltage VGS(TH) 3 4 V VGS=VDS, ID=250µA 2
Continuous Source Current IS 28 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 112 A 3
Diode Forward Voltage VSD 1.4 V IS=14A, VGS=0V 3

CAD (KiCad official)

  • Symbol: RS28N50W
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: rs28n50w-etched.step / rs28n50w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs28n50w.step / rs28n50w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (8 pp, sha256 61dbd7abcdd1cd5b, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF