component
WMO15N10T1
Public Made by Adomby adom
Wayon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWMO15N10T1
Wayon · MOSFETs · TO-252
WMO15N10T1 from Wayon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V, threshold 1.2 V to 2.5 V at ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage rated 100 V, continuous drain current 14.6 A at TC = 25°C. |
| 3 | S | passive | Source; continuous body-diode source current 14.6 A at TC = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 14.6 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 10 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 58 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 3.2 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=8A | 1 | ||
| Total Power Dissipation | PD | 41.7 | W | TC=25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction-to-Ambient | RθJA | 50 | °C/W | 1 | |||
| Thermal Resistance from Junction-to-Case | RθJC | 3 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-body Leakage current | lGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | TJ=25°C, VDS =100V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | TJ=100°C, VDS =100V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-Source on-Resistance | RDS(on) | 65 | 90 | mΩ | VGS = 10V, ID = 5A | 2 | |
| Drain-Source on-Resistance | RDS(on) | 75 | 105 | mΩ | VGS = 4.5V, ID = 3A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 14.6 | A | TC=25°C | 2 |
CAD (KiCad official)
- Symbol:
WMO15N10T1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wmo15n10t1-etched.step/wmo15n10t1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wmo15n10t1.step/wmo15n10t1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (7 pp, sha256
e68d23c72e3549e9, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).