component
SL100N03
Public Made by Adomby adom
Slkor SLKORMICRO Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSL100N03
Slkor SLKORMICRO Elec · MOSFETs · TO-252
SL100N03 from Slkor SLKORMICRO Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold of 1 V to 3 V at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain (center lead, also connected to the exposed tab); VDS rated 30 V and continuous drain current 100 A at Tc=25°C. |
| 3 | S | passive | Source; diode continuous forward current is 100 A at Tc=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (rating) | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -50 | 155 | °C | 1 | ||
| Diode Continuous Forward Current | IS | 100 | A | Tc=25°C, mounted on large heat sink | 1 | ||
| Pulse Drain Current | IDM | 400 | A | Tc=25°C, pulse drain current tested | 1 | ||
| Continuous Drain Current | ID | 100 | A | Tc=25°C, @GS=10V | 1 | ||
| Continuous Drain Current (second rating row) | ID | 54 | A | Tc=25°C | 1 | ||
| Single pulse avalanche energy | EAS | 100 | mJ | 1 | |||
| Drain-Source Breakdown Voltage | BV(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 3 | 3.5 | mΩ | VGS=10V, ID=40A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 5 | 6.5 | mΩ | VGS=4.5V, ID=30A | 2 | |
| Forward on voltage | VSD | 1.2 | V | Tj=25℃, Is=40A | 2 | ||
| Input Capacitance | CISS | 2550 | pF | VDS=30V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | COSS | 380 | pF | VDS=30V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | CRSS | 290 | pF | VDS=30V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 53 | nC | 2 | |||
| Gate Source Charge | Qgs | 9 | nC | 2 | |||
| Gate Drain Charge | Qgd | 13 | nC | 2 | |||
| Turn-on Delay Time | td(on) | 17 | nS | VDD=15V, ID=30A, VGS=10V, RG=12Ω | 2 | ||
| Turn-on Rise Time | tr | 43 | nS | VDD=15V, ID=30A, VGS=10V, RG=12Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 110 | nS | VDD=15V, ID=30A, VGS=10V, RG=12Ω | 2 | ||
| Turn-Off Fall Time | tf | 105 | nS | VDD=15V, ID=30A, VGS=10V, RG=12Ω | 2 |
CAD (KiCad official)
- Symbol:
SL100N03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sl100n03-etched.step/sl100n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sl100n03.step/sl100n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (4 pp, sha256
652ecf573fbca257, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).