component
TSA20N50MR
Public Made by Adomby adom
Truesemi MOSFETs, TO-3P-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTSA20N50MR
Truesemi · MOSFETs · TO-3P-3
TSA20N50MR from Truesemi, in a TO-3P-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±30 V maximum and threshold voltage of 2.0 to 4.0 V at VDS = VGS, ID = 250 uA. |
| 2 | D | passive | Drain; rated for 500 V VDSS and 20 A continuous current at TC = 25℃ (80 A pulsed). |
| 3 | S | passive | Source; main current return terminal, with body diode continuous forward current up to 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-3P-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Drain Current | ID | 20 | A | TC = 25℃ | 1 | ||
| Drain Current | ID | 13 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | Note 1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 1110 | mJ | Note 2 | 1 | ||
| Repetitive Avalanche Energy | EAR | 28 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 1 | ||
| Power Dissipation | PD | 280 | W | TC = 25℃ | 1 | ||
| Power Dissipation Derating | PD | 2.3 | W/℃ | Derate above 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering purposes | TL | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.44 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 40 | ℃/W | 1 | |||
| Continuous Source-Drain Diode Forward Current | IS | 20 | A | 2 | |||
| Pulsed Source-Drain Diode Forward Current | ISM | 80 | A | 2 | |||
| Source-Drain Diode Forward Voltage | VSD | 1.5 | V | IS = 20 A, VGS = 0 V | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0 V, ID = 250 uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 500 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | uA | VDS = 400 V, TJ = 125℃ | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.25 | 0.3 | Ω | VGS = 10 V, ID = 10 A | 2 | |
| Thermal Resistance, Case-to-Sink | RθCS | 0.24 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
TSA20N50MR - Footprint:
Package_TO_SOT_THT:TO-3P-3_Vertical - 3D model: TO-3P-3 (KiCad packages3D, STEP)
- 3D model files:
tsa20n50mr-etched.step/tsa20n50mr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tsa20n50mr.step/tsa20n50mr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Truesemi datasheet (6 pp, sha256
0b8f993fdb94c2af, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).