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Contents

README

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AGM318D

AGM Semi · MOSFETs · TO-252

AGM318D from AGM Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate terminal controlling the N-channel MOSFET. Absolute maximum VGS = ±20V; gate threshold voltage VGS(th) = 1.2 V (min) / 1.6 V (typ) / 2.2 V (max) at ID=250 µA.
2 D passive Drain. Electrically connected to the exposed thermal tab (pin 4). Drain-source breakdown voltage BVDSS = 30V; continuous drain current ID = 20A (Tc=25°C); RDS(on) = 18 mΩ typ at VGS=10V, ID=15A.
3 S passive Source. Reference terminal of the N-channel MOSFET; body diode anode. Body diode forward voltage VSD ≤ 1.2V at IS=15A, VGS=0V.
4 D passive Drain (thermal tab). Exposed metal tab providing primary heat-sinking path; electrically identical to pin 2 (Drain). Junction-to-case thermal resistance RθJC = 3.4 °C/W.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AGM318D

CAD (KiCad official)

  • Symbol: AGM318D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm318d-etched.step / agm318d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm318d.step / agm318d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (None pp, sha256 64ca524549a66b86, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF