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15P10PL TO220-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown15P10PL TO220-VB
VBsemi Elec · MOSFETs · TO-220AB
15P10PL TO220-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage rating of ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -100 V. |
| 3 | S | passive | Source of the P-channel MOSFET, with the same -100 V drain-source voltage rating as the drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Continuous Drain Current | ID | -23 | A | TC = 25 °C; TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -16 | A | TC = 70 °C; TJ = 150 °C | 1 | ||
| Pulsed Drain Current | IDM | -70 | A | 1 | |||
| Avalanche Current | IAS | -18 | A | 1 | |||
| Single Avalanche Energy | EAS | 16.2 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 52.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (PCB Mount) | RthJA | 50 | °C/W | PCB Mount | 1 | ||
| Junction-to-Case Thermal Resistance (Drain) | RthJC | 3.9 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -100 | V | VDS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -250 | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = -100 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | µA | VDS = -100 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | -15 | A | VDS ≤ -10 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.1 | Ω | VGS = -10 V, ID = -3.6 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.12 | Ω | VGS = -4.5 V, ID = -3.4 A | 2 | ||
| Gate Resistance | Rg | 1.2 | 5.7 | 11.5 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 23.2 | 34.8 | nC | VDS = -50 V, VGS = -10 V, ID = -3.6 A | 2 | |
| Total Gate Charge | Qg | 11.7 | 17.6 | nC | VDS = -50 V, VGS = -4.5 V, ID = -3.6 A | 2 | |
| Rise Time | tr | 12 | 18 | ns | VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 33 | 50 | ns | VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Continuous Current | IS | -8.8 | A | TC = 25 °C | 2 | ||
| Pulsed Current | ISM | -15 | A | 2 | |||
| Forward Voltage | VSD | -0.8 | -1.5 | V | IF = -2.9 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 50 | 75 | ns | IF = -2.9 A, dI/dt = 100 A/µs | 2 | |
| Peak Reverse Recovery Current | IRM(REC) | -4 | -6 | A | 2 | ||
| Reverse Recovery Charge | Qrr | 98 | 147 | nC | 2 | ||
| Input Capacitance | Ciss | 1055 | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 65 | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 41 | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 | ||
| Forward Transconductance | gfs | 12 | S | VDS = -15 V, ID = -3.6 A | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 4.8 | nC | 2 |
CAD (KiCad official)
- Symbol:
15P10PL TO220-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
15p10pl-to220-vb-etched.step/15p10pl-to220-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);15p10pl-to220-vb.step/15p10pl-to220-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
8e5c24fe8e690cbc, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).