component

IRLI2910PBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirli2910pbf-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

IRLI2910PBF-VB

VBsemi Elec · MOSFETs · TO-220F

IRLI2910PBF-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet rates gate-source voltage VGS at ±20 V.
2 D passive Drain terminal, rated for a drain-source voltage of 100 V and continuous drain current of 50 A at TC = 25 °C (package limited).
3 S passive Source terminal; source-drain diode continuous current is rated at 50 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A TC = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID 28 A TC = 125 °C 1
Pulsed Drain Current IDM 120 A 1
Avalanche Current IAS 31 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 61 mJ 1
Maximum Power Dissipation PD 360 W TC = 25 °C 1
Maximum Power Dissipation PD 3.7 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance (PCB Mount, TO-263) RthJA 40 °C/W 1
Junction-to-Case (Drain) Thermal Resistance RthJC 0.4 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VDS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.034 Ω VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance rDS(on) 0.063 Ω VGS = 10 V, ID = 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance rDS(on) 0.084 Ω VGS = 10 V, ID = 30 A, TJ = 175 °C 2
Forward Transconductance gfs 25 S VDS = 15 V, ID = 30 A 2
Gate Resistance Rg 0.5 1.7 3.3 Ω 2
Total Gate Charge Qg 90 130 nC VDS = 100 V, VGS = 10 V, ID = 65 A 2
Continuous Current (Source-Drain Diode) IS 50 A TC = 25 °C 2
Pulsed Current (Source-Drain Diode) ISM 120 A 2
Forward Voltage VSD 1 1.5 V IF = 65 A, VGS = 0 V 2
Peak Reverse Recovery Current IRM(REC) 8 12 A 2
Reverse Recovery Charge Qrr 0.52 1.2 µC 2

CAD (KiCad official)

  • Symbol: IRLI2910PBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 e213f823c036679f, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF