component
NCEP080N10
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCEP080N10
Wuxi NCE Power Semiconductor · MOSFETs · TO-220
NCEP080N10 from Wuxi NCE Power Semiconductor, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives a maximum gate-source voltage of ±20 V, threshold VGS(th) 2.0 to 4.0 V at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain; rated for VDS 100 V, continuous ID 75 A (58 A at TC=100 °C) and pulsed IDM 300 A, and also connected to the tab. |
| 3 | S | passive | Source; the datasheet gives body-diode continuous forward current IS of 75 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=±20V,VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 7.4 | 8 | mΩ | VGS=10V, ID=37.5A | 2 | |
| Forward Transconductance | gFS | 60 | S | VDS=5V,ID=37.5A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=37.5A | 2 | ||
| Diode Forward Current | IS | 75 | A | 2 | |||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 75 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID(100℃) | 58 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 300 | A | 1 | |||
| Maximum Power Dissipation | PD | 120 | W | 1 | |||
| Derating factor | 0.8 | W/℃ | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.25 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
NCEP080N10 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ncep080n10-etched.step/ncep080n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep080n10.step/ncep080n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
4c52a1a6e83ec6a7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).