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Contents

README

markdown

HVESD15A1-HD1-G4-08

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HVESD15A1-HD1-G4-08 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage VBR 16 V IT = 1mA 2
Reverse Leakage Current IR 1000 nA VRWM = 15V 2
Clamping Voltage VC 23 30 V IPP = 4A, tp = 8/20us 2
Reverse Working Voltage VRWM 15 V 2
Peak Pulse Power PPP 150 W tp = 8/20 us 1
Maximum lead temperature for soldering TL 260 °C 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1

CAD (KiCad official)

  • Symbol: HVESD15A1-HD1-G4-08
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hvesd15a1-hd1-g4-08-etched.step / hvesd15a1-hd1-g4-08-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hvesd15a1-hd1-g4-08.step / hvesd15a1-hd1-g4-08.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 fc3ada7a3cfb9604, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF