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FH8808G2

Public Made by Adom

by adom

鑫飞宏 , DFN-6L(2x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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FH8808G2

鑫飞宏 · IC · DFN-6L(2x3)

FH8808G2 from 鑫飞宏, in a DFN-6L(2x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (pin 1, marked by the dot/'1' on the package); N-channel, VDS max 20V, ID 9.5A at TA=25°C.
2 S1 passive Source of MOSFET 1, second source pad; N-channel, VDS max 20V, ID 9.5A at TA=25°C.
3 G1 input Gate of MOSFET 1 with ESD protection; gate-source voltage limit ±12V.
4 G2 input Gate of MOSFET 2 with ESD protection; gate-source voltage limit ±12V.
5 S2 passive Source of MOSFET 2; N-channel, VDS max 20V, ID 9.5A at TA=25°C.
6 S2 passive Source of MOSFET 2, second source pad; N-channel, VDS max 20V, ID 9.5A at TA=25°C.
7 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer 鑫飞宏
Package DFN-6L(2x3)
Category
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=18V, VGS=0V 2
Gate-Body Leakage Current IGSS -10 10 uA VGS=±10V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.85 1.5 V VDS=VGS, ID=1.0mA 2
Drain-Source On-State Resistance RDS(ON) 9 10.2 mΩ VGS=4.0V, ID=2.4A 2
Drain-Source On-State Resistance RDS(ON) 10 11.2 mΩ VGS=3.0V, ID=2.4A 2
Drain-Source On-State Resistance RDS(ON) 11.5 12.7 mΩ VGS=2.5V, ID=2.4A 2
Diode Forward Voltage VSD 0.84 1.2 V VGS=0V, IS=9.5A 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 9.5 A TA=25°C 1
Drain Current-Continuous ID 7.6 A TA=70°C 1
Drain Current-Pulsed IDM 60 A Pulsed, pulse width <10us, duty cycle <1% (note a) 1
Maximum Power Dissipation PD 1.56 W TA=25°C 1
Maximum Power Dissipation PD 1 W TA=70°C 1
Operating Junction and Storage Temperature Range TJ TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W 1

CAD (KiCad official)

  • Symbol: FH8808G2
  • Footprint: Package_DFN_QFN:DFN-6-1EP_3x2mm_P0.5mm_EP1.65x1.35mm
  • 3D model: DFN-6L(2x3), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: fh8808g2-etched.step / fh8808g2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh8808g2.step / fh8808g2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: 鑫飞宏 datasheet (6 pp, sha256 3fc6596a44d603d6, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF