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BSC019N04NS G-VB

Public Made by Adom

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VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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BSC019N04NS G-VB

VBsemi Elec · MOSFETs · DFN5x6-8

BSC019N04NS G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1, marked with a dot on the package top view); VDS rating 40 V.
2 S passive Source terminal of the N-channel MOSFET; continuous drain current 120 A at TC = 25 °C (package limit 80 A).
3 S passive Source terminal of the N-channel MOSFET; pulsed drain current is 360 A.
4 G input Gate terminal of the N-channel MOSFET; gate-source voltage rating is ±20 V.
5 D passive Drain terminal of the N-channel MOSFET; VDS rating is 40 V.
6 D passive Drain terminal of the N-channel MOSFET; RDS(on) is 0.0025 Ω at VGS = 10 V.
7 D passive Drain terminal of the N-channel MOSFET; RDS(on) is 0.0028 Ω at VGS = 6.5 V.
8 D passive Drain terminal of the N-channel MOSFET; junction-to-case (drain) thermal resistance is 1.0 °C/W typical, 1.5 °C/W maximum.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 100 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0025 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.0028 Ω VGS = 6.5 V, ID = 20 A 2
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
Gate Resistance Rg 0.2 0.7 1.4 Ω f = 1 MHz 2
Total Gate Charge Qg 78 117 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Total Gate Charge Qg 38 57 nC VDS = 20 V, VGS = 4.5 V, ID = 20 A 2
Turn-On Delay Time td(on) 14 25 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 9 18 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 41 65 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 22 35 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 42 65 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 13 25 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 50 A TC = 25 °C 2
Pulse Diode Forward Current ISM 60 A 2
Body Diode Voltage VSD 0.75 1.1 V IS = 5 A 2
Body Diode Reverse Recovery Time trr 40 60 ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 48 72 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 120 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 80 A TC = 70 °C 1
Continuous Drain Current ID 33 A Tb, A = 25 °C, t = 10 s 1
Continuous Drain Current ID 26 A Tb, A = 70 °C 1
Pulsed Drain Current IDM 360 A 1
Continuous Source-Drain Diode Current IS 100 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 4.9 A Tb, A = 25 °C, t = 10 s 1
Single Pulse Avalanche Current IAS 40 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 80 mJ 1
Maximum Power Dissipation PD 83 W TC = 25 °C 1
Maximum Power Dissipation PD 53 W TC = 70 °C 1
Maximum Power Dissipation PD 5.4 W Tb, A = 25 °C, t = 10 s 1
Maximum Power Dissipation PD 3.4 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Peak temperature (notes d, e) 1
Maximum Junction-to-Ambient RthJA 18 23 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (steady state) RthJA 90 °C/W Steady state (note d) 1
Maximum Junction-to-Case (Drain) RthJC 1 1.5 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: BSC019N04NS G-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: bsc019n04ns-g-vb-etched.step / bsc019n04ns-g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc019n04ns-g-vb.step / bsc019n04ns-g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 3208c2dd22aa320a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF