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Contents

README

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AGM418M

AGM-Semi · MOSFETs · SOP-8

AGM418M from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; drain-source voltage rating is 40 V and continuous drain current is 8.0 A at Ta=25℃.
2 G1 input Gate of MOSFET 1; gate-source voltage is limited to ±20 V with a threshold of 1.2 V min to 2.5 V max at 250 µA.
3 S2 passive Source of MOSFET 2; drain-source voltage rating is 40 V and continuous drain current is 8.0 A at Ta=25℃.
4 G2 input Gate of MOSFET 2; gate-source voltage is limited to ±20 V with a threshold of 1.2 V min to 2.5 V max at 250 µA.
5 D2 passive Drain of MOSFET 2, internally common with pin 6; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A.
6 D2 passive Drain of MOSFET 2, internally common with pin 5; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A.
7 D1 passive Drain of MOSFET 1, internally common with pin 8; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A.
8 D1 passive Drain of MOSFET 1, internally common with pin 7; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 8 A Ta=25℃ (Note 1) 1
Drain Current-Continuous ID 4.8 A Ta=100℃ 1
Drain Current-Continuous @ Current-Pulsed IDM 32 A Note 2 1
Total Power Dissipation PD 2.5 W Ta=25℃ 1
Total Power Dissipation PD 1 W Ta=100℃ 1
Avalanche energy EAS 56 mJ Note 3 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 18 24 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance RDS(on) 21 35 mΩ VGS=4.5V, ID=5A 2
Source-Drain Current (Body Diode) ISD 8 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=10A 2

CAD (KiCad official)

  • Symbol: AGM418M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm418m-etched.step / agm418m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm418m.step / agm418m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 570556c1eacf783a, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF