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Contents

README

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DMN3070SSN-HXY

HXY MOSFET · MOSFETs · SOT-23

DMN3070SSN-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet rates gate-source voltage at ±20 V, and VGS(th) is 1.0 V min, 1.5 V typ, 2.5 V max at VDS=VGS, ID=250 µA.
2 D passive Drain terminal; the datasheet rates drain-source voltage at 30 V and continuous drain current at 5.8 A.
3 S passive Source terminal; the datasheet rates continuous source current IS at 4.6 A and pulsed source current ISM at 18.4 A (page 2).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 22 28 mΩ VGS=10V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 26 32 mΩ VGS=4.5V , ID=3A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS , ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 2.3 4.6 VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 5 6.9 nC VDS=15V , VGS=4.5V , ID=4A 2
Gate-Source Charge Qgs 1.1 2.2 nC VDS=15V , VGS=4.5V , ID=4A 2
Gate-Drain Charge Qgd 2.6 2.8 nC VDS=15V , VGS=4.5V , ID=4A 2
Turn-On Delay Time Td(on) 2 4 ns VDD=15V , VGS=10V , RG=3.3 , ID=4A 2
Rise Time Tr 34.4 62 ns VDD=15V , VGS=10V , RG=3.3 , ID=4A 2
Turn-Off Delay Time Td(off) 13.2 26 ns VDD=15V , VGS=10V , RG=3.3 , ID=4A 2
Fall Time Tf 4.8 9.6 ns VDD=15V , VGS=10V , RG=3.3 , ID=4A 2
Input Capacitance Ciss 420 582 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 60 87 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 53 71 pF VDS=15V , VGS=0V , f=1MHz 2
Continuous Source Current IS 4.6 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 18.4 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 5.8 A 1
Drain Current-Pulsed IDM 18.4 A Note 1 1
Maximum Power Dissipation PD 1 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 1

CAD (KiCad official)

  • Symbol: DMN3070SSN-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn3070ssn-hxy-etched.step / dmn3070ssn-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn3070ssn-hxy.step / dmn3070ssn-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7c36d7065f910f62, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF