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Contents

README

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BT137S-600E

KTP · Thyristors (SCR)/Modules · TO-252

BT137S-600E from KTP, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal T1 of the triac (MT1), the current return terminal; the datasheet rates the device for 8 A RMS on-state current and 600 V VDRM/VRRM.
2 T2 passive Main terminal T2 of the triac (MT2), connected to the tab; the datasheet rates the device for 8 A RMS on-state current at TC≤68℃ and 600 V VDRM/VRRM.
3 G input Gate trigger terminal, with maximum IGT of 10 mA (quadrants I-III) and 25 mA (quadrant IV) and maximum VGT of 1 V at VD=12 V.

Key specifications

Parameter Value
Manufacturer KTP
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage VDRM 600 V Tj=25℃ 1
Repetitive peak reverse voltage VRRM 600 V Tj=25℃ 1
RMS on-state current IT(RMS) 8 A TC≤68℃ 1
Non repetitive surge peak on-state current ITSM 65 A full cycle, tp=20ms, Tj=25℃ 1
Non repetitive surge peak on-state current ITSM 72 A full cycle, tp=16.6ms, Tj=25℃ 1
I2t value for fusing I2t 21 A2s tp=10ms, Tj=25℃ 1
Critical rate of rise of on-state current (Ⅰ-Ⅱ-Ⅲ) dI/dt 80 A/μs IG=2×IGT, f=100Hz, Tj=125℃ 1
Critical rate of rise of on-state current (Ⅳ) dI/dt 40 A/μs IG=2×IGT, f=100Hz, Tj=125℃ 1
Peak gate current IGM 4 A tp=20μs, Tj=125℃ 1
Average gate power dissipation PG(AV) 0.5 W Tj=125℃ 1
Peak gate power PGM 10 W 1
Peak pulse voltage Vpp 4 kV Tj=25℃; non-repetitive, off-state; FIG.8 1
Gate trigger current (Ⅰ-Ⅱ-Ⅲ) IGT 10 mA VD=12V RL=33Ω 2
Gate trigger current (Ⅳ) IGT 25 mA VD=12V RL=33Ω 2
Gate trigger voltage (ALL) VGT 1 V 2
Gate non-trigger voltage (ALL) VGD 0.2 V VD=VDRM Tj=125℃ RL=3.3KΩ 2
Latching current (Ⅰ-Ⅲ-Ⅳ) IL 20 mA IG=1.2IGT 2
Latching current (Ⅱ) IL 35 mA IG=1.2IGT 2
Holding current IH 20 mA IT=500mA 2
Critical rate of rise of off-state voltage dV/dt 250 V/μs VD=400V Gate Open Tj=125℃ 2
Critical rate of rise of commutating voltage (dV/dt)c 5 V/μs (dI/dt)c=2.7A/ms, Tj=125℃ 2
On-state voltage VTM 1.5 V ITM=10A tp=380μs Tj=25℃ 2
Threshold voltage VTO 0.8 V Tj=125℃ 2
Dynamic resistance RD 53 mΩ Tj=125℃ 2
Repetitive peak off-state current IDRM 5 μA VD=VDRM VR=VRRM Tj=25℃ 2
Repetitive peak reverse current IRRM 0.35 mA Tj=125℃ 2
Gate-controlled turn-on time ton 1.5 μs IG=40mA IA=200mA IR=20mA Tj=25℃ 2
Turn-off time toff 15 μs IG=40mA IA=200mA IR=20mA Tj=25℃ 2
Junction to case thermal resistance (AC) Rth(j-c) 5 ℃/W junction to case (AC) 2
Junction to ambient thermal resistance (AC) Rth(j-a) 130 ℃/W junction to ambient (AC) 2

CAD (KiCad official)

  • Symbol: BT137S-600E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: bt137s-600e-etched.step / bt137s-600e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt137s-600e.step / bt137s-600e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KTP datasheet (7 pp, sha256 d985ed519844df98, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF